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MMBZ5262B-E3-08

Vishay Intertechnology

MMBZ5262B-E3-08 by Vishay Intertechnology

Vishay Intertechnology's MMBZ5262B-E3-08 Zener Diode has a 51V Nominal Reference Voltage, 125 ohm Max Dynamic Impedance, and 5% Max Voltage Tolerance. Ideal for applications requiring precise voltage regulation in compact electronic circuits with operating temperatures ranging from -55 to 150 °C.

Median Price

$0.020

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1k+

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Arrow

USA . 2,959 parts In-Stock

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Verical

USA . 1,000 parts In-Stock

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Chip1Stop

Japan . 1,000 parts In-Stock

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$0.038

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$0.033

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Nova Conductors

Japan . 10 parts In-Stock

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$0.008

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ACDS - Activité Composants Distribution Service

France . 15,000 parts In-Stock

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Bristol Electronics

USA . 15,000 parts In-Stock

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Dan-Mar Components

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Vyrian

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Ampacity Inc.

Singapore . 1,625 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Argo Parts USA

USA . 4,186 parts In-Stock

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Continental Prestige Electronics

USA . 2,008 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,419 parts In-Stock

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Corohmni

South Africa . 359 parts In-Stock

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Advanced Electronics

New Zealand . 600 parts In-Stock

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AZTECH Wire

Italy . 553 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Authorized Procurement Solutions

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Perfect Parts

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Overview

Unlock the power of reliable voltage regulation with Vishay Intertechnology's MMBZ5262B-E3-08 Zener Diode. Designed for precision performance and durability, this diode is the perfect solution for a wide range of applications. From electronics to automotive, this small outline diode offers a maximum voltage tolerance of 5% and a nominal reference voltage of 51 V, ensuring consistent and stable operation. Trust in Vishay Intertechnology's expertise and elevate your projects with the quality and value of the MMBZ5262B-E3-08 Zener Diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the diode lightweight and resistant to external elements, improving its durability and ease of handling.

Working Test Current: 2.5 mA

The low working test current allows for efficient operation while minimizing power consumption and heat generation.

Surface Mount: YES

The surface mount capability makes it easy to integrate the diode into the circuit board, saving space and simplifying the assembly process.

Maximum Voltage Tolerance: 5%

The tight maximum voltage tolerance ensures precise voltage regulation in electronic circuits, making it a reliable choice for various applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand extreme conditions without compromising its performance or longevity.

Maximum Dynamic Impedance: 125 ohm

The low maximum dynamic impedance results in minimal voltage variation across the diode, contributing to stable and accurate voltage regulation.

Minimum Operating Temperature: -55 °C

The wide range of minimum operating temperature allows the diode to function reliably in both high and low-temperature environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance, ensuring a secure and lasting connection in the circuit.

Maximum Power Dissipation: 0.225 W

The high maximum power dissipation rating indicates the diode's ability to handle large amounts of power without overheating or failing.

Nominal Reference Voltage: 51 V

The specific nominal reference voltage of 51V makes this diode suitable for applications requiring precise voltage regulation around this value.

Technology: ZENER

The Zener technology enables the diode to maintain a constant voltage across its terminals, making it ideal for voltage regulation and protection circuits.

Technical Specifications

Zener Diodes MMBZ5262B-E3-08 attributes and parameters. Explore more Zener Diodes devices from Vishay Intertechnology

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

125 ohm

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Nominal Reference Voltage:

51 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

2.5 mA

Trade Compliance

MMBZ5262B-E3-08 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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