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GSD2004W-HE3-08

Vishay Intertechnology

GSD2004W-HE3-08 by Vishay Intertechnology

GSD2004W-HE3-08 by Vishay Intertechnology is a single diode with a max reverse recovery time of 0.05 us and a max reverse current of 0.1 uA. It is designed for high voltage fast recovery applications, with a max operating temperature of 150°C and min breakdown voltage of 300 V.

Median Price

$0.310

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,819 parts In-Stock

1+ parts

$0.310

100+ parts

$0.133

1k+ parts

$0.064

10k+ parts

$0.043

2,819

$0.310

$0.133

$0.064

$0.043

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.063

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$0.063

-

-

-

Vyrian

USA . 11,488 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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11,488

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 6,936 parts In-Stock

1+ parts

$0.063

100+ parts

-

1k+ parts

-

10k+ parts

$0.062

6,936

$0.063

-

-

$0.062

Argo Parts USA

USA . 1,555 parts In-Stock

1+ parts

$0.063

100+ parts

-

1k+ parts

-

10k+ parts

$0.061

1,555

$0.063

-

-

$0.061

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.063

100+ parts

$0.062

1k+ parts

-

10k+ parts

-

100

$0.063

$0.062

-

-

Ampacity Inc.

Singapore . 11,708 parts In-Stock

1+ parts

$0.272

100+ parts

-

1k+ parts

-

10k+ parts

-

11,708

$0.272

-

-

-

Semicontronic

India . 11,534 parts In-Stock

1+ parts

$0.272

100+ parts

$0.265

1k+ parts

$0.264

10k+ parts

-

11,534

$0.272

$0.265

$0.264

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A-Z Elektronik GmbH

Germany . 50,400 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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50,400

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-

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Kepictronics

USA . 13,000 parts In-Stock

1+ parts

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13,000

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Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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500

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Overview

Looking for high-quality diodes and rectifiers that offer fast recovery and reliable performance? Look no further than the GSD2004W-HE3-08 by Vishay Intertechnology. With a maximum reverse test voltage of 240V and a minimum breakdown voltage of 300V, this rectifier diode is perfect for high voltage applications. The small outline package shape and dual terminal position make it easy to integrate into your designs. Trust Vishay Intertechnology's reputation for excellence in semiconductor manufacturing and experience the value and benefits that the GSD2004W-HE3-08 brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection for the diode, making it suitable for a wide range of applications.

Maximum Reverse Recovery Time: 0.05 us

With a fast reverse recovery time of 0.05 us, this diode is ideal for high-speed applications where quick switching is required.

Reverse Test Voltage: 240 V

The high reverse test voltage of 240 V ensures that the diode can withstand voltage spikes and fluctuations, enhancing its reliability.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this diode can perform reliably in high-temperature environments without overheating.

Maximum Power Dissipation: 0.35 W

The low power dissipation of 0.35 W ensures that the diode operates efficiently without generating excess heat, increasing its lifespan.

Technical Specifications

Diodes & Rectifiers GSD2004W-HE3-08 attributes and parameters. Explore more Diodes & Rectifiers devices from Vishay Intertechnology

Specs

Application:

HIGH VOLTAGE FAST RECOVERY

Minimum Breakdown Voltage:

300 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

4 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.225 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.35 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

300 V

Maximum Reverse Current:

.1 uA

Maximum Reverse Recovery Time:

.05 us

Reverse Test Voltage:

240 V

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Trade Compliance

GSD2004W-HE3-08 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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