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GSD2004W-E3-08

Vishay Intertechnology

GSD2004W-E3-08 by Vishay Intertechnology

GSD2004W-E3-08 by Vishay Intertechnology is a single rectifier diode with a reverse test voltage of 240V. It has a max forward voltage of 1V and can handle an output current of 0.225A. Ideal for high voltage fast recovery applications, this diode operates b/w -55°C to 150°C and has a small outline package style.

Median Price

$0.050

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Element14

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$0.136

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$0.062

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Future Electronics

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Overview

Discover the GSD2004W-E3-08 by Vishay Intertechnology, a high-quality rectifier diode perfect for high voltage fast recovery applications. With a maximum reverse recovery time of 0.05 us and a maximum reverse current of 0.1 uA, this diode offers exceptional performance and reliability. Its small outline package style and matte tin terminal finish make it easy to install, while its dual terminals ensure a secure connection. Trust Vishay Intertechnology for cutting-edge technology that delivers value and efficiency to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes this diode durable and resistant to damage.

Config: SINGLE

The single configuration simplifies the installation process and saves space on the circuit board.

Surface Mount: YES

The surface mount feature allows for easy installation and saves time during assembly.

Maximum Reverse Recovery Time: 0.05 us

The fast reverse recovery time ensures efficient and reliable operation of the diode.

Maximum Reverse Current: 0.1 uA

The low reverse current helps in reducing power loss and improving efficiency of the circuit.

Package Shape: RECTANGULAR

The rectangular shape of the package makes it easy to handle and mount on the circuit board.

Reverse Test Voltage: 240 V

The high reverse test voltage rating ensures the diode can withstand high voltage conditions without failure.

No. of Terminals: 2

The two terminals simplify the connection process and make it easy to integrate into the circuit.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the board and allows for compact designs.

Application: HIGH VOLTAGE FAST RECOVERY

This diode is ideal for applications requiring high voltage handling and fast recovery times.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures the diode can function reliably in a wide range of environments.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows the diode to operate in cold conditions without issues.

Terminal Finish: Matte Tin (Sn)

The matte tin finish provides a stable and reliable connection for the diode.

Terminal Position: DUAL

The dual terminal position offers flexibility in installation and connection options.

Maximum Power Dissipation: 0.35 W

The high maximum power dissipation capability allows the diode to handle high power loads without overheating.

Minimum Breakdown Voltage: 300 V

The high minimum breakdown voltage rating ensures the diode can handle high voltage spikes without breakdown.

Diode Type: RECTIFIER DIODE

The rectifier diode type is well-suited for converting AC to DC in power supply applications.

Maximum Forward Voltage (VF): 1 V

The low maximum forward voltage drop contributes to efficient energy conversion in the circuit.

Maximum Output Current: 0.225 A

The high maximum output current rating allows the diode to handle high current loads with ease.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering and ensures a secure connection on the board.

Maximum Repetitive Peak Reverse Voltage: 300 V

The high maximum repetitive peak reverse voltage rating ensures the diode's reliability in high voltage applications.

Maximum Non Repetitive Peak Forward Current: 4 A

The high maximum non repetitive peak forward current rating makes this diode suitable for applications with occasional high current spikes.

Diode Element Material: SILICON

The use of silicon material in the diode element ensures high performance and reliability in various applications.

Technical Specifications

Diodes & Rectifiers GSD2004W-E3-08 attributes and parameters. Explore more Diodes & Rectifiers devices from Vishay Intertechnology

Specs

Application:

HIGH VOLTAGE FAST RECOVERY

Minimum Breakdown Voltage:

300 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

4 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.225 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.35 W

Maximum Repetitive Peak Reverse Voltage:

300 V

Maximum Reverse Current:

.1 uA

Maximum Reverse Recovery Time:

.05 us

Reverse Test Voltage:

240 V

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Trade Compliance

GSD2004W-E3-08 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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