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BFR93ARGELB-GS08

Vishay Intertechnology

BFR93ARGELB-GS08 by Vishay Intertechnology

Vishay Intertechnology's BFR93ARGELB-GS08 is an NPN transistor with a min hFE of 40 and max IC of 0.05A. With a power dissipation of 0.2W, it operates up to 150°C. Ideal for applications requiring a single configuration in surface mount technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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VNN

France . 792 parts In-Stock

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Vyrian

USA . 466 parts In-Stock

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Nova Conductors

Japan . 450 parts In-Stock

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AZTECH Wire

Italy . 705 parts In-Stock

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$13.993

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705

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Semicontronic

India . 1,390 parts In-Stock

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$14.050

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$13.699

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$13.628

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Ampacity Inc.

Singapore . 1,091 parts In-Stock

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$46.050

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Kepictronics

USA . 24,000 parts In-Stock

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Continental Prestige Electronics

USA . 6,085 parts In-Stock

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Argo Parts USA

USA . 3,928 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Assy Fe

Spain . 3,000 parts In-Stock

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Bastille Electronics

Australia . 40 parts In-Stock

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Overview

Unlock limitless possibilities with the BFR93ARGELB-GS08 by Vishay Intertechnology. Known for their top-notch quality and reliability, Vishay Intertechnology has once again delivered a superior product in the category of Other Function Transistors. This NPN transistor offers unparalleled performance in a compact surface-mount configuration, making it ideal for a wide range of applications. Whether you're looking to enhance the efficiency of your electronic devices or improve circuit designs, the BFR93ARGELB-GS08 provides the value, benefits, and advantages you need to stay ahead in today's competitive market. Elevate your projects with Vishay Intertechnology.

Feature Benefit Bullets

Polarity or Channel Type:

NPN - Provides versatility in applications requiring an NPN transistor.

Configuration:

SINGLE - Simplifies circuit design by having a single transistor in the package.

Surface Mount:

YES - Suitable for compact and space-saving designs.

Maximum Power Dissipation (Abs):

0.2 W - Can handle moderate power levels for various applications.

Minimum DC Current Gain (hFE):

40 - Ensures reliable amplification of input signal.

Maximum Operating Temperature:

150 °C - Can withstand high temperatures without malfunctioning.

Maximum Collector Current (IC):

0.05 A - Capable of handling moderate current loads in the circuit.

Terminal Finish:

Matte Tin (Sn) - Provides corrosion resistance and good solderability.

Technical Specifications

Other Function Transistors BFR93ARGELB-GS08 attributes and parameters. Explore more Other Function Transistors devices from Vishay Intertechnology

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Trade Compliance

BFR93ARGELB-GS08 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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