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BFR92ARGELB-GS08

Vishay Intertechnology

BFR92ARGELB-GS08 by Vishay Intertechnology

Vishay Intertechnology's BFR92ARGELB-GS08 is an NPN transistor with a min DC current gain of 65. It has a max power dissipation of 0.2W and can operate at temperatures up to 150°C. Ideal for applications requiring low collector current such as signal amplification in surface mount configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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VNN

France . 3,738 parts In-Stock

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Vyrian

USA . 1,430 parts In-Stock

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Nova Conductors

Japan . 22 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,733 parts In-Stock

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$0.710

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Corohmni

South Africa . 197 parts In-Stock

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$0.730

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AZTECH Wire

Italy . 456 parts In-Stock

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$9.080

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Ampacity Inc.

Singapore . 967 parts In-Stock

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$25.050

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Semicontronic

India . 1,177 parts In-Stock

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$36.050

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$35.149

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$34.968

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Kepictronics

USA . 6,000 parts In-Stock

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Argo Parts USA

USA . 4,849 parts In-Stock

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Continental Prestige Electronics

USA . 1,124 parts In-Stock

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Bastille Electronics

Australia . 40 parts In-Stock

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Overview

Discover the superior performance and reliability of the BFR92ARGELB-GS08 by Vishay Intertechnology. As a leading manufacturer in the industry, Vishay Intertechnology ensures top-notch quality in their products. This NPN transistor is perfect for a variety of applications, offering high efficiency and durability. Experience the value and benefits of this product, from its single configuration to its surface mount design. Trust Vishay Intertechnology to deliver exceptional performance for all your electronic needs.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used for switching applications, making this product versatile for a variety of electronic circuits.

Configuration: SINGLE

Single configuration transistors are easy to integrate into circuits, simplifying the design process.

Surface Mount: YES

Surface mount capability allows for easy and compact integration onto circuit boards, saving space and reducing assembly time.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, this transistor can handle moderate power levels, suitable for many common electronic applications.

Minimum DC Current Gain (hFE): 65

A minimum DC current gain of 65 ensures good amplification capabilities, making this transistor suitable for signal amplification purposes.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand elevated temperatures, ensuring reliable performance in various operating conditions.

Maximum Collector Current (IC): 0.03 A

A maximum collector current of 0.03A allows for the handling of moderate current levels, making this transistor suitable for various switching and amplification applications.

Technical Specifications

Other Function Transistors BFR92ARGELB-GS08 attributes and parameters. Explore more Other Function Transistors devices from Vishay Intertechnology

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

65

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

BFR92ARGELB-GS08 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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