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4N27-X009

Vishay Intertechnology

4N27-X009 by Vishay Intertechnology

Vishay Intertechnology's 4N27-X009 optocoupler has a max forward current of 0.06A, isolation voltage of 5300V, and collector-emitter breakdown voltage of 30V. Ideal for applications requiring high isolation levels and signal transmission in harsh environments due to its surface mount configuration.

Median Price

$0.730

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 709 parts In-Stock

1+ parts

$0.730

100+ parts

$0.363

1k+ parts

$0.278

10k+ parts

$0.228

709

$0.730

$0.363

$0.278

$0.228

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

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$0.245

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100

$0.245

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Vyrian

USA . 7,037 parts In-Stock

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7,037

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VNN

France . 2,958 parts In-Stock

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Speed Components Ltd

Israel . 40 parts In-Stock

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40

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 4,753 parts In-Stock

1+ parts

$0.245

100+ parts

-

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$0.238

4,753

$0.245

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$0.238

Continental Prestige Electronics

USA . 3,564 parts In-Stock

1+ parts

$0.245

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$0.240

3,564

$0.245

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$0.240

Ampacity Inc.

Singapore . 705 parts In-Stock

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$0.600

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705

$0.600

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AZTECH Wire

Italy . 554 parts In-Stock

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$14.208

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554

$14.208

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Perfect Parts

USA . 1,519 parts In-Stock

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1,519

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Overview

Unleash the power of seamless communication with the Vishay Intertechnology 4N27-X009 Optocoupler Transistor Output. With a reputation for excellence in quality and performance, Vishay delivers products that exceed expectations. Ideal for applications requiring reliable signal isolation, this optocoupler offers a high current transfer ratio and impressive isolation voltage. Experience peace of mind knowing your circuits are protected with the Vishay 4N27-X009. Elevate your projects with trusted technology that delivers unmatched value and reliability.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration provides simplicity and ease of use in applications where only one output is needed.

Maximum Forward Current: 0.06 A

High maximum forward current allows for reliable operation in circuits requiring higher current levels.

Optoelectronic Type: TRANSISTOR OUTPUT OPTOCOUPLER

Transistor output optocoupler offers efficient signal isolation and amplification capabilities.

Maximum Operating Temperature: 100 °C

Wide temperature range ensures stable performance in various environmental conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for operation in cold environments without issues.

Terminal Finish: Matte Tin (Sn)

Matte tin terminal finish provides good solderability and reliability in connection.

Maximum Power Dissipation: 0.15 W

Low power dissipation ensures energy efficiency and prevents overheating.

Minimum Current Transfer Ratio: 10%

High current transfer ratio ensures accurate signal transmission with minimal loss.

Maximum Dark Current: 50 nA

Low dark current minimizes power consumption and interference in dark conditions.

Minimum Collector-emitter Breakdown Voltage: 30 V

High breakdown voltage provides protection against voltage spikes and overloads.

Nominal Current Transfer Ratio: 30%

High nominal current transfer ratio ensures efficient signal amplification and transmission.

Maximum Isolation Voltage: 5300 V

High isolation voltage ensures safety and protection in high voltage applications.

Mounting Feature: SURFACE MOUNT

Surface mount feature allows for easy and secure installation on circuit boards.

Maximum Forward Voltage: 1.5 V

Low forward voltage drop reduces power consumption and heat generation.

Maximum On State Current: 0.05 A

High on-state current allows for reliable operation in circuits with high output current requirements.

Technical Specifications

Optocoupler Transistor Outputs 4N27-X009 attributes and parameters. Explore more Optocoupler Transistor Outputs devices from Vishay Intertechnology

Specs

Additional Features:

UL RECOGNIZED

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Minimum Current Transfer Ratio:

10 %

Nominal Current Transfer Ratio:

30 %

Maximum Dark Current:

50 nA

Maximum Forward Current:

.06 A

Maximum Forward Voltage:

1.5 V

Maximum Isolation Voltage:

5300 V

JESD-609 Code:

e3

Mounting Feature:

No. of Elements:

1

Maximum On State Current:

.05 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-55 Cel

Optoelectronic Type:

Maximum Power Dissipation:

.15 W

Sub-Category:

Optocoupler - Transistor Outputs

Terminal Finish:

Trade Compliance

4N27-X009 Optoelectronics trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.40.80.00

SB

8541.40.80.00

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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