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25TTS12PBF

Vishay Intertechnology

25TTS12PBF by Vishay Intertechnology

25TTS12PBF by Vishay Intertechnology is a single SCR with max. DC gate trigger current of 45mA, non-repetitive peak on-state current of 300A, and max. RMS on-state current of 25A. It is used in applications requiring high voltage control such as power supplies, motor controls, and lighting systems.

Median Price

$69.152

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$69.152

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300

$69.152

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VNN

France . 3,561 parts In-Stock

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3,561

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Vyrian

USA . 1,494 parts In-Stock

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1,494

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Diverse Electronics

Canada . 5 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,208 parts In-Stock

1+ parts

$15.100

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1,208

$15.100

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AZTECH Wire

Italy . 773 parts In-Stock

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$18.168

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773

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Netroflash

USA . 1,000 parts In-Stock

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$69.152

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1,000

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Glotronic Ltd.

UK . 3,140 parts In-Stock

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3,140

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Overview

Unleash the power of Vishay Intertechnology's 25TTS12PBF Silicon Controlled Rectifier and elevate your applications to new heights. With a maximum DC Gate Trigger Current of 45 mA and a Non Repetitive Peak On-state Current of 300 A, this SCR offers unparalleled reliability and performance. Whether you're in industrial automation, power supplies, or motor control, this product's high-quality construction and innovative design ensure optimal efficiency and durability. Trust Vishay Intertechnology to deliver cutting-edge solutions that exceed expectations. Elevate your projects with the 25TTS12PBF and experience the difference today.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides durability and protection for the SCR, making it a reliable choice for long-term use.

Maximum DC Gate Trigger Current:

45 mA - With a high gate trigger current, this SCR can easily be activated and controlled, making it suitable for a variety of applications.

Configuration:

SINGLE - The single configuration simplifies the installation and operation of the SCR, making it user-friendly and easy to integrate into circuits.

Non Repetitive Peak On-state Current:

300 A - This high peak current capability allows the SCR to handle sudden surges of power without damage, ensuring reliable performance in demanding conditions.

Package Shape:

RECTANGULAR - The rectangular shape of the package makes it easy to mount and secure, enhancing the overall stability of the SCR in different environments.

Terminal Form:

THROUGH-HOLE - The through-hole terminals provide a secure connection for wiring, reducing the risk of loose connections and improving the overall safety of the device.

Maximum On-state Current:

16 A - With a high on-state current rating, this SCR can handle significant electrical loads with ease, making it ideal for power control applications.

Maximum Leakage Current:

10 mA - The low leakage current ensures minimal power loss when the SCR is in the off-state, increasing overall efficiency and reducing energy consumption.

Repetitive Peak Reverse Voltage:

1200 V - The high reverse voltage rating provides protection against voltage spikes and fluctuations, increasing the reliability and durability of the SCR.

No. of Terminals:

3 - The three terminals offer flexibility in wiring configurations, allowing for versatile use in various circuit designs.

Package Style (Meter):

FLANGE MOUNT - The flange mount style provides a secure and stable mounting option for the SCR, ensuring it stays in place even in high-vibration environments.

Maximum Operating Temperature:

125 °C - With a high operating temperature range, this SCR can withstand heat and perform reliably in harsh conditions, making it suitable for industrial applications.

Trigger Device Type:

SCR - Being a Silicon Controlled Rectifier, this device offers precise control and efficient power handling capabilities, making it a popular choice for power electronics applications.

Minimum Operating Temperature:

40 °C - The low minimum operating temperature allows the SCR to function in cold environments without compromising its performance, adding to its versatility.

Terminal Finish:

MATTE TIN - The matte tin finish on the terminals provides corrosion resistance and solderability, ensuring a reliable electrical connection for the SCR.

Terminal Position:

SINGLE - The single terminal position simplifies installation and connection, reducing the risk of errors and improving the overall efficiency of the device.

Maximum RMS On-state Current:

25 A - With a high RMS current rating, this SCR can handle continuous current flow effectively, making it suitable for high-power applications.

Maximum DC Gate Trigger Voltage:

2.5 V - The low gate trigger voltage requirement ensures efficient control and activation of the SCR, contributing to its reliable performance in various circuits.

Repetitive Peak Off-state Voltage:

1200 V - The high off-state voltage rating provides a robust insulation barrier, protecting the SCR from voltage transients and ensuring long-term reliability.

Nominal Circuit Commutated Turn-off Time:

110 us - The fast turn-off time allows the SCR to switch off quickly and efficiently, reducing heat dissipation and improving overall performance in dynamic power control applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 25TTS12PBF attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Vishay Intertechnology

Specs

Nominal Circuit Commutated Turn-off Time:

110 us

Configuration:

Maximum DC Gate Trigger Current:

45 mA

Maximum DC Gate Trigger Voltage:

2.5 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

10 mA

Non Repetitive Peak On-state Current:

300 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

16 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

25 A

Repetitive Peak Off-state Voltage:

1200 V

Repetitive Peak Reverse Voltage:

1200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

25TTS12PBF Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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