Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; JESD-30 Code: R-PSFM-T3; Minimum DS Breakdown Voltage: 80 V;
Median Price
-
Lifecycle Status
Suppliers In-Stock
0
In-Stock Inventory
< 1k
Authorized Procurement Solutions
1+ parts
100+ parts
1k+ parts
10k+ parts
Power Field Effect Transistors (FET) TK35A08N1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Toshiba
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Sub-Category:
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
TK35A08N1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.
LL4148
Secos
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Sinyork
RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V;
1N4148
Digitron Semiconductors
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N7002
General Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;
Onsemi
FDLL4148
FDLL4148 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.004 us. With a max forward voltage of 1V and output current of 0.2A, it is ideal for applications requiring fast switching speeds in electronic circuits. The diode's glass package body material and isolated case connection make it suitable for surface mount designs operating at temperatures up to 175°C.
2N2222A
New Jersey Semiconductor Products
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;
1N4148W-T
Rectron
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
CL10B104KB8NNNC
Samsung Electro-mechanics
CL10B104KB8NNNC by Samsung Electro-mechanics is a ceramic capacitor with capacitance of 0.1uF and rated DC voltage of 50V. It has a negative tolerance of 10% and temperature coefficient of 15ppm/°C, suitable for surface mount applications in various electronic devices. With dimensions of 1.6mm x 0.8mm x 0.9mm, it operates b/w -55 to 125 °C providing stable performance in compact designs.
Micro Commercial Components
Small Signal Field-Effect Transistors; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .34 A; Package Style (Meter): SMALL OUTLINE;
SS14
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
PIC18F4550-I/ML
Microchip Technology
The Microchip Technology PIC18F4550-I/ML is an 8-bit microcontroller with a max clock frequency of 48 MHz. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it ideal for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this chip offers efficient performance in compact designs.
LM78L05ACMX/NOPB
National Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 8; Package Code: SOP; Terminal Form: GULL WING; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
BAV99
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
EU2B-YS3203F
Idec
ROTARY SWITCH;
Eic Semiconductor
BAT54SLT1G
BAT54SLT1G by Onsemi is a fast recovery Schottky diode with 2 elements in series connected configuration. It has a max reverse recovery time of 0.005 us and a max forward voltage of 0.8 V. Ideal for applications requiring high-speed rectification, it operates b/w -55 to 150 °C and can handle a max output current of 0.2 A.
1N4148W-T by Micro Commercial Components is a single rectifier diode with a max reverse recovery time of 0.004 us. It operates b/w -55 to 150 °C and has a max output current of 0.15 A. Ideal for applications requiring fast switching speeds in small outline packages.
OPA2227UA
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
ERJ3GEY0R00V
Panasonic
ERJ3GEY0R00V by Panasonic is a SMT fixed resistor with 0 ohm resistance, suitable for jumper applications. It features a metal glaze/thick film technology, rated for temperatures b/w -55 to 155 °C. With a compact rectangular construction and matte tin over nickel terminal finish, it is ideal for surface mount installations in various electronic devices.
BSC011N03LSIATMA1
Infineon Technologies
Infineon's BSC011N03LSIATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 400A IDM, 0.0015 ohm RDS(on), and 100mJ EAS rating. Its small outline package and DUAL terminal position make it suitable for various power management systems.
FDD5614P
FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.
BS170
Topaz Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e0; Maximum Operating Temperature: 150 Cel;
NDT452AP
NDT452AP by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 5A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -65 to 150 °C, it has 0.065 ohm On Resistance and can handle up to 15A Pulsed Drain Current.
CSD18563Q5AT
Texas Instruments
CSD18563Q5AT by Texas Instruments is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 96A IDM and 146mJ EAS, operating in the -55 to 150 °C temperature range. This SINGLE transistor has a 0.0108 ohm Drain-Source Resistance and comes in a SMALL OUTLINE package style.
STW12NK90Z
STMicroelectronics
STW12NK90Z by STMicroelectronics is a N-CHANNEL Power FET with 900V DS Breakdown Voltage and 44A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 230W, this transistor has a 0.88 ohm RDS(on) and can handle up to 11A drain current.
IRF7493TRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Finish: MATTE TIN; No. of Elements: 1;
NDT456P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Drain Current (ID): 7.5 A; No. of Elements: 1;
BSC22DN20NS3GATMA1
Infineon's BSC22DN20NS3GATMA1 is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 28A IDM and 0.225 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150°C. This PLASTIC/EPOXY transistor has DUAL terminals and a built-in DIODE, making it suitable for high-power circuit designs.
IRFR540ZTRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 91 W; Package Style (Meter): SMALL OUTLINE; No. of Elements: 1;
NDT456P by Onsemi is a P-CHANNEL Power FET with 30V DS Breakdown Voltage and 7.5A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it offers 0.03 ohm On Resistance and can handle up to 20A Pulsed Drain Current.
NDT3055L_NL
Fairchild Semiconductor
Fairchild Semiconductor's NDT3055L_NL is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 25A IDM, and 0.1 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max temp of 150°C, making it ideal for high-power switching circuits.
BSS123
Calogic
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain Current (ID): .17 A; Operating Mode: ENHANCEMENT MODE;
FDD4243
The Onsemi FDD4243 is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, 60A IDM, and 0.064 ohm RDS. Ideal for power management applications due to its high current handling capability and low on-resistance. Suitable for use in various electronic devices requiring efficient power control in compact designs.
IRF540SPBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Avalanche Energy Rating (EAS): 230 mJ; Maximum Drain-Source On Resistance: .077 ohm;
BSZ097N04LSGATMA1
Infineon BSZ097N04LSGATMA1 is a N-CHANNEL FET with 40V DS breakdown voltage, ideal for SWITCHING applications. Features include 160A IDM, 0.0142 ohm RDS(on), and 20mJ EAS rating. Operates in ENHANCEMENT MODE up to 175°C, with PLASTIC/EPOXY package and DUAL terminal position.
IRF640
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Qualification: Not Qualified; Maximum Power Dissipation Ambient: 125 W;
FDS3672
FDS3672 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 7.5A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, this transistor has an EAS of 416mJ and 0.023 ohm RDS(on).
IRF540STRLPBF
Vishay Intertechnology
Vishay Intertechnology's IRF540STRLPBF is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 110A IDM and 0.077 ohm RDS(on). With a max power dissipation of 150W, this MOSFET operates in ENHANCEMENT MODE at up to 175°C.
BSC060N10NS3GATMA1
BSC060N10NS3GATMA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.006 ohm Drain-Source Resistance, and 360A Pulsed Drain Current. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Suitable for high-power systems requiring efficient power management in compact designs.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
TK35A08N1,S4X
Toshiba
Power Field-Effect Transistors;
TK35N65W5,S1F
TK35A08N1,S4X(S
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Drain Current (Abs) (ID): 55 A; Maximum Operating Temperature: 150 Cel;
TK35A65W
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 650 V; Terminal Form: THROUGH-HOLE;
TK35A65W5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Avalanche Energy Rating (EAS): 614 mJ; JEDEC-95 Code: TO-220AB;
TK35A65W5,S5X
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
TK35A65W,S5X
TK35E08N1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 72 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
TK35E08N1,S1X
TK35N65W
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 140 A; Avalanche Energy Rating (EAS): 614 mJ; Case Connection: DRAIN;
TK35N65W5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
TK35N65W,S1F
TK35S04K3L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Case Connection: DRAIN; Package Shape: RECTANGULAR;
TK35S04K3L,LXHQ
TK35S04K3L(T6L1,NQ
TK35S04K3L(TE16L1)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 58 W; Maximum Drain Current (Abs) (ID): 35 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
TK35S04K3L(TE16L1,Q)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 58 W; Maximum Drain Current (ID): 35 A; Maximum Drain Current (Abs) (ID): 35 A;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved