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RN1503(TE85L,F)

Toshiba

RN1503(TE85L,F) by Toshiba

Toshiba's RN1503(TE85L,F) is a NPN BJT transistor with 2 elements, 0.1A max collector current, and 0.3W power dissipation. Ideal for small signal applications requiring min hFE of 70.

Median Price

$0.400

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,091 parts In-Stock

1+ parts

$0.400

100+ parts

$0.218

1k+ parts

$0.142

10k+ parts

$0.061

3,091

$0.400

$0.218

$0.142

$0.061

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 3,242 parts In-Stock

1+ parts

$0.340

100+ parts

-

1k+ parts

-

10k+ parts

-

3,242

$0.340

-

-

-

Component Stockers USA

USA . 4,374 parts In-Stock

1+ parts

$0.450

100+ parts

$0.280

1k+ parts

$0.140

10k+ parts

-

4,374

$0.450

$0.280

$0.140

-

Overview

Experience the superior quality and reliability of Toshiba's RN1503(TE85L,F) NPN Small Signal Bipolar Junction Transistor. This cutting-edge technology offers a versatile solution for a wide range of applications, from amplifiers to power management systems. With a maximum power dissipation of 0.3W and a minimum DC current gain of 70, this transistor delivers exceptional performance and efficiency. Trust in Toshiba's reputation for excellence and innovation to bring value and benefits to your projects with the RN1503(TE85L,F).

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification circuits and have low noise performance, making this product suitable for various applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving time and space in electronic designs.

No. of Elements: 2

Having two elements in the transistor provides flexibility in circuit design and allows for more complex configurations.

Maximum Power Dissipation (Abs): 0.3 W

With a high maximum power dissipation, this transistor can handle heat dissipation efficiently, ensuring reliability in operation.

Minimum DC Current Gain (hFE): 70

A higher DC current gain ensures better amplification performance and signal integrity, making this transistor suitable for audio and other signal processing applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and stability in electronic circuits, making them a preferred choice in various applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate power loads, making it suitable for small signal amplification tasks.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) RN1503(TE85L,F) attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

70

No. of Elements:

2

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Transistor Element Material:

SILICON

Trade Compliance

RN1503(TE85L,F) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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