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RN1501(TE85L,F)

Toshiba

RN1501(TE85L,F) by Toshiba

Toshiba's RN1501(TE85L,F) is a NPN BJT transistor with 2 elements, max power dissipation of 0.3W, and min DC current gain of 30. Ideal for small signal applications requiring a max collector current of 0.1A in surface mount configurations.

Median Price

$0.122

Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip1Stop

Japan . 3,000 parts In-Stock

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$0.122

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$0.091

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$0.080

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$0.080

RS (Exports)

UK . 1,025 parts In-Stock

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$0.150

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$0.132

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Verical

USA . 914 parts In-Stock

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$0.097

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Nova Conductors

Japan . 10 parts In-Stock

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Semicontronic

India . 904 parts In-Stock

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$0.082

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$0.080

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$0.080

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904

$0.082

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Ampacity Inc.

Singapore . 970 parts In-Stock

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$0.178

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$0.178

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Advanced Electronics

New Zealand . 600 parts In-Stock

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$1.554

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$1.414

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$1.274

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600

$1.554

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Argo Parts USA

USA . 5,054 parts In-Stock

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Continental Prestige Electronics

USA . 1,596 parts In-Stock

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Aranea Global

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Perfect Parts

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Overview

Toshiba Bias Resistor Built-in Transistors (BRT) offer a wide range of polarity options. The bias resistor transistors are available in NPN, PNP, NPN + PNP, PNP + NPN, NPN x 2, and PNP x 2 polarities. The Toshiba bias resistor built-in transistors offer 3-pin, 5-pin, and 6-pin configurations with options for single, 2-in-1 (point-symmetrical), and 2-in-1 (common-emitter) internal connections.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits which makes this product versatile for various applications.

Surface Mount: YES

Surface mount technology allows for easy installation on circuit boards, saving space and improving overall design flexibility.

No. of Elements: 2

Having 2 elements in one package provides a compact solution for multiple transistor applications, reducing the overall footprint on the PCB.

Maximum Power Dissipation (Abs): 0.3 W

The high maximum power dissipation rating ensures the transistor can handle moderate power levels, increasing reliability and performance.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 ensures sufficient amplification for most low to medium power applications, making this transistor suitable for a wide range of circuits.

Transistor Element Material: SILICON

Silicon is a common and reliable semiconductor material, offering good performance characteristics and ensuring reliability in various operating conditions.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1 A allows the transistor to handle moderate current levels, making it suitable for many small signal applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) RN1501(TE85L,F) attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

30

No. of Elements:

2

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Transistor Element Material:

SILICON

Trade Compliance

RN1501(TE85L,F) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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