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RN1403(TE85L,F)

Toshiba

RN1403(TE85L,F) by Toshiba

Toshiba's RN1403(TE85L,F) is a NPN small signal bipolar junction transistor (BJT) with surface mount capability. It has a max power dissipation of 0.2W and a min DC current gain of 70. This transistor is commonly used in various electronic applications requiring low power amplification or switching functions.

Median Price

$0.060

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Arrow

USA . 27,000 parts In-Stock

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Chip1Stop

Japan . 27,000 parts In-Stock

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$0.032

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Verical

USA . 24,000 parts In-Stock

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RS (Exports)

UK . 1,200 parts In-Stock

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$0.089

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$0.075

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$0.071

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Nova Conductors

Japan . 650 parts In-Stock

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$0.062

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TME

Poland . 2,900 parts In-Stock

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$0.052

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$0.043

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Vyrian

USA . 19,563 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Ampacity Inc.

Singapore . 19,538 parts In-Stock

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$0.027

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Semicontronic

India . 19,400 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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$0.061

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$0.058

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Continental Prestige Electronics

USA . 2,943 parts In-Stock

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Argo Parts USA

USA . 283 parts In-Stock

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Corohmni

South Africa . 78 parts In-Stock

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$0.852

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Aztec Data Supply Inc.

USA . 190 parts In-Stock

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$1.700

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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$1.780

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$1.691

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$1.691

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$1.780

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Perfect Parts

USA . 53,760 parts In-Stock

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Overview

Discover the RN1403(TE85L,F) by Toshiba, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance and reliability. With its NPN polarity and surface mount capability, this transistor is perfect for a wide range of applications. Experience the benefits of its maximum power dissipation of 0.2 W and minimum DC current gain of 70, ensuring optimal functionality. Manufactured with superior silicon material by Toshiba, this product guarantees durability and longevity. Unlock the true potential of your electronic projects with the RN1403(TE85L,F) and enjoy unmatched value and advantages that Toshiba brings to its customers.

Feature Benefit Bullets

Polarity or Channel Type: NPN

The NPN polarity or channel type allows for versatile use in various circuit configurations, making this small signal BJT suitable for a wide range of applications.

Surface Mount: YES

With surface mount capability, this small signal BJT offers easy and convenient integration onto PCBs, saving valuable space and simplifying the manufacturing process.

No. of Elements: 1

This small signal BJT consists of a single transistor element, making it straightforward to handle and ensuring consistency in performance.

Maximum Power Dissipation (Abs): 0.2 W

The high maximum power dissipation of 0.2 W allows this small signal BJT to handle moderate power levels effectively, resulting in reliable operation and reduced risk of overheating.

Minimum DC Current Gain (hFE): 70

The minimum DC current gain of 70 ensures efficient amplification of low-level signals, making this small signal BJT ideal for applications where signal amplification is critical.

Transistor Element Material: SILICON

Utilizing silicon as the transistor element material offers excellent reliability, temperature stability, and overall performance, making this small signal BJT a reliable choice for various electronic circuits.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this small signal BJT can handle moderate electrical currents effectively, making it suitable for a wide range of low to medium power applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) RN1403(TE85L,F) attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

70

No. of Elements:

1

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Transistor Element Material:

SILICON

Trade Compliance

RN1403(TE85L,F) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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