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RN1401

Toshiba

RN1401 by Toshiba

Toshiba RN1401 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 30, and IC of 0.1A. Ideal for switching applications due to built-in resistor and small outline package style. Operates at max temp of 150°C with fT of 250MHz for high-speed performance.

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Overview

Elevate your electronic projects with the Toshiba RN1401 Small Signal Bipolar Junction Transistor. Manufactured by Toshiba, a trusted name in the industry, this NPN transistor is perfect for switching applications. With a maximum VCEsat of just 0.3V and a minimum DC current gain of 30, this transistor offers exceptional performance and efficiency. Its built-in resistor simplifies circuit design while its compact design and surface mount capability make it easy to integrate into your projects. Trust Toshiba for quality and reliability - get your hands on the RN1401 today and take your electronic creations to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the transistor, ensuring a longer lifespan and reliable performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifying and switching applications, making this transistor versatile and suitable for various circuit designs.

Maximum VCEsat: 0.3 V

The low VCEsat value of 0.3V indicates minimal voltage drop across the collector-emitter junction, leading to efficient switching and reduced power losses.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum collector-emitter voltage of 50V, this transistor can handle relatively higher voltage levels, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1A allows this transistor to handle moderate current loads, making it suitable for small signal switching applications.

Nominal Transition Frequency (fT): 250 MHz

The high nominal transition frequency of 250MHz indicates fast response times and high-frequency operation, making this transistor ideal for use in high-speed switching circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) RN1401 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

6 pF

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

RN1401 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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