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XTRF1208RPVR

Texas Instruments

XTRF1208RPVR by Texas Instruments

XTRF1208RPVR by Texas Instruments is a wide band low power RF amplifier with 16 dB gain. Operating from 10 MHz to 11 GHz, it features BICMOS technology and a characteristic impedance of 50 ohm. Ideal for applications requiring surface mount components in the RF & Microwave domain.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,698 parts In-Stock

1+ parts

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6,698

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Digiode

USA . 799 parts In-Stock

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799

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Nova Conductors

Japan . 76 parts In-Stock

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76

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Distributors (Availability)

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Parana Technologies

USA . 2,144 parts In-Stock

1+ parts

$1.244

100+ parts

-

1k+ parts

$2.020

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2,144

$1.244

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$2.020

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ChromeModa Solutions

Germany . 2,599 parts In-Stock

1+ parts

$1.398

100+ parts

$1.146

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2,599

$1.398

$1.146

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IDEA Electronic Components Group

UK . 1,258 parts In-Stock

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$1.398

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$1.258

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1,258

$1.398

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$1.258

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Corohmni

South Africa . 171 parts In-Stock

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$2.627

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171

$2.627

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AZTECH Wire

Italy . 862 parts In-Stock

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$9.583

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862

$9.583

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Ampacity Inc.

Singapore . 617 parts In-Stock

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$12.000

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617

$12.000

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One Stop Electronics

USA . 1,249 parts In-Stock

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$35.000

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1,249

$35.000

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Continental Prestige Electronics

USA . 6,797 parts In-Stock

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Corphita

USA . 2,760 parts In-Stock

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2,760

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Argo Parts USA

USA . 2,093 parts In-Stock

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2,093

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DigiPath Technology Company

USA . 1,845 parts In-Stock

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$1.260

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1,845

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$1.260

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Bastille Electronics

Australia . 10 parts In-Stock

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10

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Overview

Elevate your RF and microwave systems with the XTRF1208RPVR by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers high-quality components that guarantee superior performance and reliability. This wide band low power amplifier is perfect for various applications, offering a 16 dB gain with a frequency range from 10 MHz to 11000 MHz. With its durable construction and advanced BICMOS technology, this component ensures optimal functionality even in extreme temperatures. Trust Texas Instruments to provide exceptional value and unmatched benefits for all your RF and microwave amplification needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material offers good durability and protection for the internal components, making this amplifier suitable for various environmental conditions.

Power Supplies (V): 3.3

Operating at a low power supply voltage of 3.3V helps in reducing power consumption and making the amplifier energy-efficient.

No. of Terminals: 12

Having 12 terminals allows for versatile connectivity options and integration into different systems with ease.

Technology: BICMOS

BICMOS technology combines the advantages of bipolar and CMOS technologies, offering high performance and efficiency in a compact package.

RF or Microwave Device Type: WIDE BAND LOW POWER

Being a wide band low power device, this amplifier is suitable for applications requiring a broad frequency range and low power consumption.

Characteristic Impedance: 50 ohm

With a 50 ohm characteristic impedance, this amplifier is compatible with standard RF systems and ensures efficient signal transfer.

Gain: 16 dB

A gain of 16 dB amplifies the input signal effectively, making this amplifier suitable for boosting weak signals in RF and microwave systems.

Minimum Operating Frequency: 10 MHz

The ability to operate at a minimum frequency of 10 MHz allows for flexibility in various applications that require low-frequency signals.

Maximum Operating Frequency: 11000 MHz

Capable of operating at a maximum frequency of 11000 MHz, this amplifier can handle high-frequency signals in demanding RF and microwave applications.

Technical Specifications

RF & Microwave Amplifiers XTRF1208RPVR attributes and parameters. Explore more RF & Microwave Amplifiers devices from Texas Instruments

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

16 dB

Mounting Feature:

No. of Functions:

1

No. of Terminals:

12

Maximum Operating Frequency:

11000 MHz

Minimum Operating Frequency:

10 MHz

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

LCC12,.08SQ,20

Power Supplies (V):

3.3

RF or Microwave Device Type:

Technology:

Trade Compliance

XTRF1208RPVR RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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