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TPS71712DCKTG4

Texas Instruments

TPS71712DCKTG4 by Texas Instruments

TPS71712DCKTG4 by Texas Instruments is a BICMOS technology LDO regulator with 0.3V dropout voltage, 1.2V output, and 0.15A current capacity. Ideal for applications requiring stable low-voltage power supplies in compact designs due to its small outline package and wide operating temperature range from -40°C to 125°C.

Median Price

$0.698

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 728 parts In-Stock

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$0.698

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$0.595

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$0.595

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Chip Stock

USA . 10,480 parts In-Stock

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Vyrian

USA . 3,948 parts In-Stock

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Digiode

USA . 2,406 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 701 parts In-Stock

1+ parts

$0.590

100+ parts

$0.575

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$0.572

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701

$0.590

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$0.572

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Ampacity Inc.

Singapore . 301 parts In-Stock

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$0.590

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301

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Corohmni

South Africa . 191 parts In-Stock

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$0.698

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Parana Technologies

USA . 1,352 parts In-Stock

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$4.892

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$5.424

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DigiPath Technology Company

USA . 787 parts In-Stock

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$5.387

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IDEA Electronic Components Group

UK . 1,043 parts In-Stock

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$5.497

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$4.947

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ChromeModa Solutions

Germany . 772 parts In-Stock

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$5.497

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$4.508

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Corphita

USA . 4,533 parts In-Stock

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Overview

Enhance your electronic designs with the TPS71712DCKTG4 by Texas Instruments, a top-tier manufacturer known for delivering superior quality products in the Fixed Regulators - Positive Single Output LDO category. This innovative regulator offers precise voltage control, ensuring reliable performance in a wide range of applications. Experience the value of stable power supply, reduced dropout voltage, and enhanced efficiency with the TPS71712DCKTG4. Elevate your projects with this compact, high-performance solution that delivers unparalleled benefits to customers seeking excellence in their designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the regulator, ensuring a longer lifespan.

Maximum Dropout Voltage-1: 1.3 V

This spec indicates the maximum voltage drop between the input and output, ensuring efficient voltage regulation even when the input voltage fluctuates.

Operating Temperature (TJ-Max): 125 °C

The high operating temperature range makes this regulator suitable for a variety of industrial and automotive applications where temperature variations are common.

Technology: BICMOS

The BICMOS technology combines the benefits of both bipolar and CMOS technologies, offering high-performance characteristics such as low power consumption and high speed operation.

Nominal Output Voltage-1: 1.2 V

This stable output voltage ensures consistent power delivery to the connected components, making it a reliable choice for sensitive electronic devices.

Maximum Output Current-1: 0.15 A

With a decent output current rating, this regulator can power a range of small to medium-sized electronics without the risk of overloading.

Technical Specifications

Fixed Regulators - Positive Single Output LDO TPS71712DCKTG4 attributes and parameters. Explore more Fixed Regulators - Positive Single Output LDO devices from Texas Instruments

Specs

Adjustability:

FIXED

Maximum Dropout Voltage-1:

.3 V

Nominal Dropout Voltage-1:

.17 V

Maximum Input Voltage Absolute:

7 V

Maximum Input Voltage:

6.5 V

Minimum Input Voltage:

2.5 V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

5

Operating Temperature (TJ-Max):

125 Cel

Operating Temperature (TJ-Min):

-40 Cel

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current-1:

.15 A

Maximum Output Voltage-1:

1.236 V

Minimum Output Voltage-1:

1.164 V

Nominal Output Voltage-1:

1.2 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Qualification Status:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Other Regulators

Surface Mount:

YES

Technology:

BICMOS

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Maximum Voltage Tolerance:

3 %

Width:

1.25 mm

Trade Compliance

TPS71712DCKTG4 Regulators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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