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TPS65911AA2ZRCR

Texas Instruments

TPS65911AA2ZRCR by Texas Instruments

TPS65911AA2ZRCR by Texas Instruments is a Power Management IC with 98 terminals, operating at -40 to 85 °C. It offers a nominal voltage of 1.8 V and max output voltage of 3.3 V. Ideal for industrial applications requiring precise power supply management in compact spaces due to its very thin profile and high switching frequency of 3300 kHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,697 parts In-Stock

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Vyrian

USA . 3,971 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,433 parts In-Stock

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$1.500

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$1.500

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Semicontronic

India . 1,340 parts In-Stock

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$2.500

100+ parts

$2.438

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$2.425

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$2.500

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$2.425

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One Stop Electronics

USA . 879 parts In-Stock

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$6.500

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879

$6.500

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Parana Technologies

USA . 1,464 parts In-Stock

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$15.072

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$15.488

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$15.072

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DigiPath Technology Company

USA . 1,003 parts In-Stock

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$16.596

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$15.269

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$16.596

$15.269

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ChromeModa Solutions

Germany . 5,646 parts In-Stock

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$16.935

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$13.887

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$16.935

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IDEA Electronic Components Group

UK . 827 parts In-Stock

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$16.935

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$16.088

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$15.242

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827

$16.935

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$15.242

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AZTECH Wire

Italy . 330 parts In-Stock

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$19.681

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Corphita

USA . 1,741 parts In-Stock

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Microchip USA

USA . 449 parts In-Stock

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Corohmni

South Africa . 289 parts In-Stock

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Overview

Experience unparalleled power management capabilities with the TPS65911AA2ZRCR from Texas Instruments. This cutting-edge Power Management IC offers exceptional quality and reliability, perfect for a wide range of applications. With advanced features and top-notch performance, this product ensures optimal efficiency and functionality, providing customers with unmatched value and benefits. Trust Texas Instruments to deliver high-quality solutions that exceed expectations and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and thermal stability, ensuring reliability in various operating conditions.

Surface Mount: YES

Surface mount capability allows for easy installation on PCBs, saving space and simplifying design.

Nominal Supply Voltage (Vsup): 1.8 V

Operating at 1.8V nominal supply voltage offers efficiency and power savings.

No. of Terminals: 98

Having 98 terminals allows for multiple connections and functions within the power management IC.

Maximum Operating Temperature: 85 °C

Operating at high temperatures of up to 85°C ensures stable performance in challenging environments.

Maximum Output Voltage: 3.3 V

Providing a maximum output voltage of 3.3V offers versatility in powering various components and devices.

Width (mm): 6 mm

Compact width of 6mm allows for space-efficient placement on PCBs.

Minimum Supply Voltage (Vsup): 1.65 V

Ability to operate at a minimum supply voltage of 1.65V provides flexibility in power input requirements.

Maximum Switching Frequency: 3300 kHz

High maximum switching frequency of 3300kHz enables rapid power management and efficient operation.

No. of Channels: 12

Having 12 channels allows for versatile power distribution and control functions.

Technical Specifications

Power Management ICs TPS65911AA2ZRCR attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

YES

JESD-30 Code:

S-PBGA-B98

JESD-609 Code:

e1

Length:

9 mm

Moisture Sensitivity Level (MSL):

3

No. of Channels:

12

No. of Functions:

1

No. of Terminals:

98

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Voltage:

3.3 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.45 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage (Vsup):

1.8 V

Surface Mount:

YES

Maximum Switching Frequency:

3300 kHz

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

6 mm

Trade Compliance

TPS65911AA2ZRCR Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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