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TPS6591133A2ZRCR

Texas Instruments

TPS6591133A2ZRCR by Texas Instruments

TPS6591133A2ZRCR by Texas Instruments is a Power Management IC with 98 terminals, operating at -40 to 85 °C. It has a max output voltage of 3.3 V and a switching frequency of 3000 kHz. Ideal for industrial applications requiring precise power supply management in compact spaces.

Median Price

$4.650

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 21,950 parts In-Stock

1+ parts

$4.650

100+ parts

$4.560

1k+ parts

$4.460

10k+ parts

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21,950

$4.650

$4.560

$4.460

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,795 parts In-Stock

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4,795

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Digiode

USA . 4,642 parts In-Stock

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4,642

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Chip Stock

USA . 2,855 parts In-Stock

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2,855

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Semi Source

USA . 66 parts In-Stock

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66

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Distributors (Availability)

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One Stop Electronics

USA . 1,343 parts In-Stock

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$2.500

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1,343

$2.500

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Parana Technologies

USA . 1,265 parts In-Stock

1+ parts

$2.923

100+ parts

-

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$3.421

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1,265

$2.923

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$3.421

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DigiPath Technology Company

USA . 1,574 parts In-Stock

1+ parts

$3.218

100+ parts

$2.961

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1,574

$3.218

$2.961

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ChromeModa Solutions

Germany . 3,349 parts In-Stock

1+ parts

$3.284

100+ parts

$2.693

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3,349

$3.284

$2.693

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IDEA Electronic Components Group

UK . 2,086 parts In-Stock

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$3.284

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$2.956

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2,086

$3.284

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$2.956

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AZTECH Wire

Italy . 289 parts In-Stock

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$13.405

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289

$13.405

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S.R.D Solutions

India . 30,000 parts In-Stock

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Corphita

USA . 1,617 parts In-Stock

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Microchip USA

USA . 287 parts In-Stock

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Overview

Enhance your power management solutions with the TPS6591133A2ZRCR by Texas Instruments, a top-of-the-line Power Management IC designed for industrial-grade applications. With its innovative design and high-quality materials, this product offers unparalleled reliability and efficiency. Whether you're in the automotive, industrial, or consumer electronics industry, this IC provides exceptional performance and precise power regulation, ensuring optimal functionality and longevity for your devices. Trust Texas Instruments to deliver cutting-edge technology that sets you apart from the competition. Elevate your power management systems with the TPS6591133A2ZRCR and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the IC, ensuring long-lasting performance.

Nominal Supply Voltage (Vsup): 3.8 V

Optimal voltage level for efficient power management and performance.

No. of Terminals: 98

Sufficient number of terminals for connecting various external components and peripherals.

Maximum Operating Temperature: 85 °C

Ability to withstand high temperatures, making it suitable for industrial applications.

Minimum Operating Temperature: -40 °C

Wide range of operating temperatures allows for use in extreme environments.

Maximum Output Voltage: 3.3 V

Provides stable output voltage to ensure proper functioning of connected devices.

Width (mm): 6 mm

Compact size makes it suitable for applications where space is limited.

Maximum Switching Frequency: 3000 kHz

High switching frequency allows for efficient power delivery and performance.

Maximum Supply Current (Isup): 0.5 mA

Low supply current consumption for energy-efficient operation.

Adjustable Threshold: YES

Ability to adjust thresholds allows for flexibility in power management settings.

Technical Specifications

Power Management ICs TPS6591133A2ZRCR attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Additional Features:

ALSO OPER FROM SUP VOL 1.7 TO 5.5 V AND 1.4 TO 3.6 V; THRESHOLD VOL ARE 3.5V, 3.45V, 2.55V AND 2.5V

Adjustable Threshold:

YES

JESD-30 Code:

R-PBGA-B98

JESD-609 Code:

e1

Length:

9 mm

Moisture Sensitivity Level (MSL):

3

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

98

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Voltage:

3.3 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Maximum Supply Current (Isup):

.5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3.8 V

Surface Mount:

YES

Maximum Switching Frequency:

3000 kHz

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

6 mm

Trade Compliance

TPS6591133A2ZRCR Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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