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TPS6591109A2ZRCR

Texas Instruments

TPS6591109A2ZRCR by Texas Instruments

TPS6591109A2ZRCR by Texas Instruments is a Power Management IC with 98 terminals, operating b/w -40 to 85°C. It offers a max output voltage of 3.3V and a switching frequency of 3000 kHz. Ideal for industrial applications requiring power supply management circuits in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,296 parts In-Stock

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Digiode

USA . 3,327 parts In-Stock

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Cyclops Electronics Ltd

UK . 242 parts In-Stock

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One Stop Electronics

USA . 282 parts In-Stock

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$5.500

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Parana Technologies

USA . 2,219 parts In-Stock

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$9.333

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$9.956

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$9.333

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DigiPath Technology Company

USA . 726 parts In-Stock

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$10.276

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$9.454

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726

$10.276

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ChromeModa Solutions

Germany . 2,058 parts In-Stock

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$10.486

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$8.599

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$10.486

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IDEA Electronic Components Group

UK . 42 parts In-Stock

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$10.486

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$9.962

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$9.437

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42

$10.486

$9.962

$9.437

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AZTECH Wire

Italy . 615 parts In-Stock

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$12.087

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Corphita

USA . 727 parts In-Stock

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Microchip USA

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Kepictronics

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Overview

Unlock the power of efficient energy management with the TPS6591109A2ZRCR by Texas Instruments. Crafted with precision and reliability in mind, Texas Instruments is a renowned manufacturer known for its top-quality power management ICs. This product is designed to optimize energy usage, ensuring seamless operation in various applications. With its compact package and advanced features, the TPS6591109A2ZRCR offers unmatched value, benefits, and advantages to customers looking for cutting-edge power supply management solutions. Experience superior performance with this industrial-grade IC that guarantees optimal efficiency and convenience.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material offers high durability and protection for the power management IC, making it suitable for various environmental conditions.

Surface Mount: YES

Surface mount technology makes installation and soldering of the IC easier, providing a reliable and efficient connection to the PCB.

No. of Terminals: 98

Having a high number of terminals allows for more versatile connectivity options in the system, enabling complex power management tasks to be effectively carried out.

Maximum Output Voltage: 3.3 V

The ability to provide a stable maximum output voltage of 3.3 V ensures compatibility with a wide range of electronic devices and systems that require such voltage levels.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this IC can operate reliably even in demanding industrial environments without overheating.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C ensures secure soldering during manufacturing processes and long-term reliability under extreme temperature conditions.

Maximum Switching Frequency: 3000 kHz

The high maximum switching frequency of 3000 kHz allows for efficient power management and regulation, ensuring smooth and stable operation of the connected devices.

Maximum Supply Voltage (Vsup): 5.5 V

Being able to handle a maximum supply voltage of 5.5 V provides flexibility in power input options, making this IC suitable for a wide range of power sources.

Technical Specifications

Power Management ICs TPS6591109A2ZRCR attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-PBGA-B98

JESD-609 Code:

e1

Length:

9 mm

Moisture Sensitivity Level (MSL):

3

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

98

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Voltage:

3.3 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Maximum Supply Current (Isup):

.5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Surface Mount:

YES

Maximum Switching Frequency:

3000 kHz

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

6 mm

Trade Compliance

TPS6591109A2ZRCR Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

5A991.G

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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