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TPS6591102BA2ZRCR

Texas Instruments

TPS6591102BA2ZRCR by Texas Instruments

TPS6591102BA2ZRCR by Texas Instruments is a Power Management IC with 98 terminals, operating at -40 to 85°C. It has a supply voltage range of 2.7V to 5.5V and offers 13 channels with a max switching frequency of 3300 kHz. Ideal for power supply management circuits in various electronic applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,087 parts In-Stock

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Digiode

USA . 529 parts In-Stock

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529

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Ampacity Inc.

Singapore . 1,405 parts In-Stock

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$6.500

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$6.500

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Semicontronic

India . 1,041 parts In-Stock

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$6.500

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$6.338

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$6.305

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One Stop Electronics

USA . 131 parts In-Stock

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$7.500

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131

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AZTECH Wire

Italy . 762 parts In-Stock

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Component Stockers USA

USA . 504 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 4,604 parts In-Stock

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Microchip USA

USA . 3,721 parts In-Stock

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Corphita

USA . 1,932 parts In-Stock

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Corohmni

South Africa . 466 parts In-Stock

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Overview

Enhance your power management solutions with the TPS6591102BA2ZRCR by Texas Instruments. Known for their top-quality products, Texas Instruments offers a wide range of Power Management ICs that are reliable and efficient. This versatile device boasts 13 channels, adjustable threshold voltage, and a maximum switching frequency of 3300 kHz, making it ideal for various applications. With a compact package style and a wide operating temperature range, this Power Supply Management Circuit provides value, efficiency, and performance to meet all your power management needs. Elevate your projects with Texas Instruments today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Surface Mount: YES

Being surface mountable makes installation and assembly easier and more efficient, saving time and effort during production.

Nominal Supply Voltage (Vsup): 3.8 V

The nominal supply voltage of 3.8V is ideal for power management applications, providing a stable power source for connected devices.

No. of Terminals: 98

Having 98 terminals allows for a higher level of connectivity and versatility in the power management system, accommodating multiple input and output sources.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this power management IC can withstand demanding environmental conditions without compromising performance.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures reliable operation even in extreme cold environments, making this product suitable for a wide range of applications.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

The terminal finish of tin/silver/copper provides excellent conductivity and corrosion resistance, enhancing the overall reliability and performance of the power management IC.

Terminal Position: BOTTOM

Bottom terminal positioning allows for easy and secure connections, facilitating efficient PCB layout and assembly.

Maximum Seated Height: 1 mm

The low maximum seated height of 1mm helps in reducing the overall profile of the product, making it suitable for compact and space-constrained applications.

No. of Channels: 13

With 13 channels, this power management IC can effectively manage power distribution and switching for multiple devices or components, enhancing system performance.

Technical Specifications

Power Management ICs TPS6591102BA2ZRCR attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

YES

JESD-30 Code:

R-PBGA-B98

JESD-609 Code:

e1

Length:

9 mm

Moisture Sensitivity Level (MSL):

3

No. of Channels:

13

No. of Functions:

1

No. of Outputs:

13

No. of Terminals:

98

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Equivalence Code:

BGA98,8X13,25

Package Shape:

Package Style (Meter):

GRID ARRAY

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3.8 V

Surface Mount:

YES

Maximum Switching Frequency:

3300 kHz

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Nominal Threshold Voltage (V):

+2.1V

Width (mm):

6 mm

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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