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TPS3837E18DBVTG4

Texas Instruments

TPS3837E18DBVTG4 by Texas Instruments

TPS3837E18DBVTG4 by Texas Instruments is a Power Management IC with 1.8V nominal voltage, suitable for industrial applications. It features a small outline package style, dual terminal position, and CMOS technology. With a wide operating temperature range (-40 to 85 °C), it offers reliable power supply support in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,664 parts In-Stock

1+ parts

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8,664

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Digiode

USA . 2,516 parts In-Stock

1+ parts

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2,516

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,049 parts In-Stock

1+ parts

$0.500

100+ parts

-

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1,049

$0.500

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Semicontronic

India . 137 parts In-Stock

1+ parts

$0.500

100+ parts

$0.488

1k+ parts

$0.485

10k+ parts

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137

$0.500

$0.488

$0.485

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One Stop Electronics

USA . 557 parts In-Stock

1+ parts

$2.500

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-

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557

$2.500

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Parana Technologies

USA . 2,142 parts In-Stock

1+ parts

$10.842

100+ parts

-

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$11.321

10k+ parts

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2,142

$10.842

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$11.321

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DigiPath Technology Company

USA . 1,303 parts In-Stock

1+ parts

$11.938

100+ parts

$10.983

1k+ parts

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1,303

$11.938

$10.983

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ChromeModa Solutions

Germany . 4,281 parts In-Stock

1+ parts

$12.182

100+ parts

$9.989

1k+ parts

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4,281

$12.182

$9.989

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IDEA Electronic Components Group

UK . 1,563 parts In-Stock

1+ parts

$12.182

100+ parts

$11.573

1k+ parts

$10.964

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1,563

$12.182

$11.573

$10.964

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AZTECH Wire

Italy . 556 parts In-Stock

1+ parts

$12.993

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556

$12.993

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Microchip USA

USA . 3,447 parts In-Stock

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3,447

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Corphita

USA . 1,990 parts In-Stock

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1,990

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Corohmni

South Africa . 56 parts In-Stock

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56

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Overview

Experience the next level of power management with the TPS3837E18DBVTG4 by Texas Instruments. Renowned for their exceptional quality and reliability, Texas Instruments delivers cutting-edge solutions in the Power Management ICs category. This versatile product is designed to provide optimal performance in a wide range of applications, ensuring efficiency and stability. With its compact package style and advanced technology, the TPS3837E18DBVTG4 offers customers unmatched value, benefits, and advantages. Upgrade your power supply support circuit with this innovative solution today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on PCBs.

Nominal Supply Voltage (Vsup): 1.8 V

Optimal nominal supply voltage for power management applications.

No. of Terminals: 5

Simplifies the connection process and reduces complexity of the circuit.

Maximum Operating Temperature: 85 °C

Allows for reliable operation in high temperature environments.

Minimum Operating Temperature: -40 °C

Ensures functionality in extreme cold conditions.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

Provides excellent conductivity and corrosion resistance.

Technology: CMOS

CMOS technology offers low power consumption and high speed performance.

Maximum Supply Voltage (Vsup): 6 V

Supports a wide range of supply voltages for flexibility in different applications.

Technical Specifications

Power Management ICs TPS3837E18DBVTG4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Additional Features:

RESET THRESHOLD VOLTAGE IS 1.71V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.45 mm

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

1.6 V

Nominal Supply Voltage (Vsup):

1.8 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

1.6 mm

Trade Compliance

TPS3837E18DBVTG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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