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TPS3836K33DBVTG4

Texas Instruments

TPS3836K33DBVTG4 by Texas Instruments

TPS3836K33DBVTG4 by Texas Instruments is a Power Management IC with a nominal voltage of 1.8V, suitable for industrial applications. It features a small outline package style, dual terminal position, and operates in temperatures ranging from -40°C to 85°C. Ideal for power supply support circuits requiring a min supply voltage of 1.6V and max seated height of 1.45mm.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Chip Stock

USA . 4,350 parts In-Stock

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Vyrian

USA . 2,276 parts In-Stock

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Digiode

USA . 693 parts In-Stock

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693

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Connector Distribution Corp

USA . 140 parts In-Stock

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140

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Right Parts Inc.

USA . 140 parts In-Stock

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140

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Nova Conductors

Japan . 100 parts In-Stock

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100

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One Stop Electronics

USA . 1,620 parts In-Stock

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$3.500

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$3.500

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Ampacity Inc.

Singapore . 705 parts In-Stock

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$4.500

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705

$4.500

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AZTECH Wire

Italy . 604 parts In-Stock

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$9.129

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Corohmni

South Africa . 285 parts In-Stock

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$10.850

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$10.850

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Parana Technologies

USA . 2,306 parts In-Stock

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$19.172

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$1,780.446

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$17.255

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$19.172

$1,780.446

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DigiPath Technology Company

USA . 200 parts In-Stock

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$21.111

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$19.422

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ChromeModa Solutions

Germany . 5,599 parts In-Stock

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$21.542

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$17.664

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IDEA Electronic Components Group

UK . 2,353 parts In-Stock

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$21.542

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$20.465

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$19.388

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Kepictronics

USA . 15,000 parts In-Stock

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Lixinc

USA . 13,657 parts In-Stock

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Continental Prestige Electronics

USA . 6,305 parts In-Stock

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Corphita

USA . 4,785 parts In-Stock

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Argo Parts USA

USA . 1,914 parts In-Stock

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Microchip USA

USA . 1,613 parts In-Stock

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Bastille Electronics

Australia . 750 parts In-Stock

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Perfect Parts

USA . 267 parts In-Stock

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Overview

Enhance your power management solutions with the TPS3836K33DBVTG4 by Texas Instruments. With a reputation for superior quality and reliability, Texas Instruments delivers cutting-edge Power Management ICs that cater to a wide range of applications. This small outline, low profile IC offers customers the value of efficient power supply support circuitry, ensuring optimal performance in industrial settings. Trust Texas Instruments to provide the innovation you need for seamless integration and enhanced functionality. Upgrade your power management system today with the TPS3836K33DBVTG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and cost-effective, ideal for compact and budget-friendly power management applications.

Surface Mount: YES

Being surface mountable allows for easy installation on the circuit board, saving space and making the assembly process more efficient.

Nominal Supply Voltage (Vsup): 1.8 V

The nominal supply voltage of 1.8V is suitable for a wide range of electronic devices, providing stable power management for various applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this power management IC can withstand high temperatures without compromising performance, ensuring reliability in harsh environments.

Technology: CMOS

Utilizing CMOS technology offers low power consumption and high noise immunity, making this power management IC efficient and reliable in managing power distribution.

Technical Specifications

Power Management ICs TPS3836K33DBVTG4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Additional Features:

RESET THRESHOLD VOLTAGE IS 2.93V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.45 mm

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

1.6 V

Nominal Supply Voltage (Vsup):

1.8 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

1.6 mm

Trade Compliance

TPS3836K33DBVTG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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