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TPS3103E15DBVTG4

Texas Instruments

TPS3103E15DBVTG4 by Texas Instruments

TPS3103E15DBVTG4 by Texas Instruments is a Power Management IC with 1.5V Nominal Voltage, 0.4/3.3V Power Supplies, and -40 to 85°C Operating Temperature Range. It is used in industrial applications for power supply support circuits due to its compact SMALL OUTLINE package and low profile design.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 17,840 parts In-Stock

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Vyrian

USA . 4,685 parts In-Stock

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4,685

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Digiode

USA . 219 parts In-Stock

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219

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 191 parts In-Stock

1+ parts

$0.500

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191

$0.500

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AZTECH Wire

Italy . 850 parts In-Stock

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$5.538

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850

$5.538

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One Stop Electronics

USA . 816 parts In-Stock

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$6.500

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816

$6.500

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Semicontronic

India . 1,126 parts In-Stock

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$7.500

100+ parts

$7.312

1k+ parts

$7.275

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1,126

$7.500

$7.312

$7.275

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Parana Technologies

USA . 946 parts In-Stock

1+ parts

$14.204

100+ parts

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$14.657

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946

$14.204

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$14.657

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ChromeModa Solutions

Germany . 1,597 parts In-Stock

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$15.959

100+ parts

$13.086

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1,597

$15.959

$13.086

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IDEA Electronic Components Group

UK . 106 parts In-Stock

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$15.959

100+ parts

$15.161

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$14.363

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106

$15.959

$15.161

$14.363

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Corphita

USA . 1,979 parts In-Stock

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1,979

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Microchip USA

USA . 1,295 parts In-Stock

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1,295

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DigiPath Technology Company

USA . 618 parts In-Stock

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$14.389

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618

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$14.389

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Corohmni

South Africa . 417 parts In-Stock

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417

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Overview

Upgrade your power management game with the TPS3103E15DBVTG4 by Texas Instruments. Crafted with precision and expertise, this Power Management IC offers unparalleled quality and reliability. Perfect for a variety of applications, this product boasts a small outline, low profile package shape, making it versatile and efficient. With a nominal supply voltage of 1.5V and a wide temperature range, this IC provides optimal performance in industrial settings. Trust Texas Instruments to deliver cutting-edge technology that enhances your power supply support circuit - experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and reliability, making this product suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easy installation and integration into electronic devices, saving time and effort during assembly.

Nominal Supply Voltage (Vsup): 1.5 V

The nominal supply voltage of 1.5V ensures compatibility with a wide range of electronic components and systems.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this product can withstand harsh environmental conditions and extended use.

Technology: CMOS

The CMOS technology used in this power management IC ensures low power consumption and high efficiency, making it ideal for energy-efficient designs.

Technical Specifications

Power Management ICs TPS3103E15DBVTG4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Additional Features:

RESET THRESHOLD VOLTAGE IS 1.434V; POWER ON RESET GENERATOR

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Length:

2.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

0.4/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.45 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.022 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

.9 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+1.434V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.6 mm

Trade Compliance

TPS3103E15DBVTG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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