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TPD1E10B06DPYT

Texas Instruments

TPD1E10B06DPYT by Texas Instruments

TPD1E10B06DPYT by Texas Instruments is a single transient suppression device with a max power dissipation of 90W. It features a breakdown voltage of 6V and bidirectional polarity, making it ideal for protecting electronic circuits from voltage transients in applications requiring high reliability and performance.

Median Price

$0.379

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 2,000 parts In-Stock

1+ parts

$0.170

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$0.170

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$0.160

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$0.170

$0.170

$0.160

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Arrow

USA . 10 parts In-Stock

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$0.566

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10

$0.566

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DigiKey

USA . 43,187 parts In-Stock

1+ parts

$0.980

100+ parts

$0.388

1k+ parts

$0.318

10k+ parts

$0.307

43,187

$0.980

$0.388

$0.318

$0.307

Mouser Electronics

USA . 407 parts In-Stock

1+ parts

$1.180

100+ parts

$0.490

1k+ parts

$0.378

10k+ parts

$0.346

407

$1.180

$0.490

$0.378

$0.346

Avnet

USA . 4,500 parts In-Stock

1+ parts

-

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$0.063

4,500

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$0.063

Verical

USA . 411 parts In-Stock

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$0.379

1k+ parts

$0.315

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411

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$0.379

$0.315

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Chip1Stop

Japan . 162 parts In-Stock

1+ parts

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$0.354

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$0.327

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162

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$0.354

$0.327

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Distributors (In-Stock)

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Digiode

USA . 408 parts In-Stock

1+ parts

$0.162

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408

$0.162

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Nova Conductors

Japan . 76 parts In-Stock

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$0.518

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$0.518

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Chip Stock

USA . 690,990 parts In-Stock

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Semtec, LLC

USA . 93,696 parts In-Stock

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HZD GmbH

Germany . 19,500 parts In-Stock

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Vyrian

USA . 11,274 parts In-Stock

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Kruse Electronics AG

Switzerland . 10,000 parts In-Stock

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Kruse

Germany . 10,000 parts In-Stock

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Bristol Electronics

USA . 3,329 parts In-Stock

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3,329

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Flex Direct, LLC

USA . 3,329 parts In-Stock

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3,329

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K-1 Technologies

USA . 489 parts In-Stock

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489

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Atlantic Semiconductor

USA . 489 parts In-Stock

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489

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ComSIT Distribution GmbH

Germany . 250 parts In-Stock

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250

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EPE Components Inc.

USA . 174 parts In-Stock

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Sunrise Surplus Inc.

USA . 125 parts In-Stock

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125

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Distributors (Availability)

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Ampacity Inc.

Singapore . 10,930 parts In-Stock

1+ parts

$0.058

100+ parts

-

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10,930

$0.058

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Parana Technologies

USA . 1,811 parts In-Stock

1+ parts

$0.112

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$1.466

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1,811

$0.112

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$1.466

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DigiPath Technology Company

USA . 1,098 parts In-Stock

1+ parts

$0.123

100+ parts

$0.114

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1,098

$0.123

$0.114

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ChromeModa Solutions

Germany . 5,516 parts In-Stock

1+ parts

$0.126

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$0.103

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5,516

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IDEA Electronic Components Group

UK . 605 parts In-Stock

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$0.126

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$0.113

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605

$0.126

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Corphita

USA . 390 parts In-Stock

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$0.153

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Corohmni

South Africa . 214 parts In-Stock

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$0.417

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Advanced Electronics

New Zealand . 870 parts In-Stock

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$0.430

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$0.408

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$0.408

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870

$0.430

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$0.408

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Continental Prestige Electronics

USA . 2,097 parts In-Stock

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$0.518

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$0.508

2,097

$0.518

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$0.508

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.518

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$0.492

10k+ parts

$0.482

1,000

$0.518

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$0.492

$0.482

Argo Parts USA

USA . 10 parts In-Stock

1+ parts

$0.518

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$0.503

10

$0.518

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$0.503

Perfect Parts

USA . 60,200 parts In-Stock

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Lixinc

USA . 3,968 parts In-Stock

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Infinite Electronics LLP (Excess)

. 3,179 parts In-Stock

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Formix International (Excess)

India . 3,060 parts In-Stock

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Robosynatics

Brazil . 250 parts In-Stock

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Lucentia Tech

USA . 250 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 100 parts In-Stock

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100

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Overview

Enhance your electronic devices with the TPD1E10B06DPYT by Texas Instruments, a top-tier manufacturer of transient suppression devices. Designed to protect against voltage transients, this chip carrier package offers unparalleled quality and reliability. With a bidirectional polarity and avalanche technology, this device ensures maximum clamping voltage while maintaining a nominal breakdown voltage of 6V. Ideal for a wide range of applications, from consumer electronics to industrial equipment, this product guarantees peace of mind in the face of electrical fluctuations. Upgrade your devices today with the TPD1E10B06DPYT and experience superior protection and performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the device reliable in various operating conditions.

Surface Mount: YES

Allows for convenient and efficient installation on circuit boards, saving space and reducing assembly time.

Maximum Non Repetitive Peak Reverse Power Dissipation: 90 W

Capable of handling high power surges, ensuring protection for electronic components.

Nominal Breakdown Voltage: 6 V

Provides protection by diverting excess voltage away from sensitive components at the specified threshold.

Maximum Reverse Current: 0.1 uA

Ensures minimal leakage current, maintaining the efficiency of the transient suppression device.

Minimum Operating Temperature: -40 °C

Can operate in extreme cold conditions, making it suitable for a wide range of environments.

Maximum Operating Temperature: 125 °C

Capable of withstanding high temperatures, ensuring reliable performance even in hot conditions.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during assembly processes without damage or degradation.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient voltage suppression, offering efficient protection against voltage spikes.

Technology: AVALANCHE

Avalanche diode technology allows for quick response to transient voltage spikes, improving overall protection.

Technical Specifications

Transient Suppression Devices TPD1E10B06DPYT attributes and parameters. Explore more Transient Suppression Devices devices from Texas Instruments

Specs

Minimum Breakdown Voltage:

6 V

Nominal Breakdown Voltage:

6 V

Maximum Clamping Voltage:

10 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

90 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

5.5 V

Maximum Reverse Current:

.1 uA

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TPD1E10B06DPYT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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