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TPD1E04U04DPYT

Texas Instruments

TPD1E04U04DPYT by Texas Instruments

TPD1E04U04DPYT by Texas Instruments is a single transient suppression device with a breakdown voltage of 6.2V and max clamping voltage of 5.3V, suitable for protecting electronic circuits from voltage transients. It features an avalanche diode technology, operates b/w -40°C to 125°C, and complies with IEC-61000-4-2, 4-4, 4-5 standards.

Median Price

$0.683

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 20,588 parts In-Stock

1+ parts

$0.772

100+ parts

$0.525

1k+ parts

$0.269

10k+ parts

-

20,588

$0.772

$0.525

$0.269

-

Mouser Electronics

USA . 3,303 parts In-Stock

1+ parts

$1.090

100+ parts

$0.579

1k+ parts

$0.446

10k+ parts

$0.405

3,303

$1.090

$0.579

$0.446

$0.405

DigiKey

USA . 30,568 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.496

10k+ parts

$0.439

30,568

-

-

$0.496

$0.439

RS (Exports)

UK . 1,620 parts In-Stock

1+ parts

-

100+ parts

$0.594

1k+ parts

$0.583

10k+ parts

-

1,620

-

$0.594

$0.583

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 73 parts In-Stock

1+ parts

$0.427

100+ parts

-

1k+ parts

-

10k+ parts

-

73

$0.427

-

-

-

Digiode

USA . 2,070 parts In-Stock

1+ parts

$0.733

100+ parts

-

1k+ parts

-

10k+ parts

-

2,070

$0.733

-

-

-

Chip Stock

USA . 286,660 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

286,660

-

-

-

-

Vyrian

USA . 8,896 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,896

-

-

-

-

TME

Poland . 5,750 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.499

10k+ parts

-

5,750

-

-

$0.499

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,037 parts In-Stock

1+ parts

$0.055

100+ parts

-

1k+ parts

$1.432

10k+ parts

-

2,037

$0.055

-

$1.432

-

DigiPath Technology Company

USA . 1,616 parts In-Stock

1+ parts

$0.061

100+ parts

$0.056

1k+ parts

-

10k+ parts

-

1,616

$0.061

$0.056

-

-

IDEA Electronic Components Group

UK . 1,933 parts In-Stock

1+ parts

$0.062

100+ parts

-

1k+ parts

$0.056

10k+ parts

-

1,933

$0.062

-

$0.056

-

ChromeModa Solutions

Germany . 1,542 parts In-Stock

1+ parts

$0.062

100+ parts

$0.051

1k+ parts

-

10k+ parts

-

1,542

$0.062

$0.051

-

-

Corohmni

South Africa . 409 parts In-Stock

1+ parts

$0.179

100+ parts

-

1k+ parts

-

10k+ parts

-

409

$0.179

-

-

-

Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.418

100+ parts

-

1k+ parts

$0.402

10k+ parts

-

50

$0.418

-

$0.402

-

Continental Prestige Electronics

USA . 6,371 parts In-Stock

1+ parts

$0.427

100+ parts

-

1k+ parts

-

10k+ parts

$0.418

6,371

$0.427

-

-

$0.418

Argo Parts USA

USA . 1,002 parts In-Stock

1+ parts

$0.427

100+ parts

-

1k+ parts

-

10k+ parts

$0.414

1,002

$0.427

-

-

$0.414

Ampacity Inc.

Singapore . 8,878 parts In-Stock

1+ parts

$0.484

100+ parts

-

1k+ parts

-

10k+ parts

-

8,878

$0.484

-

-

-

Corphita

USA . 105 parts In-Stock

1+ parts

$0.695

100+ parts

-

1k+ parts

-

10k+ parts

-

105

$0.695

-

-

-

Overview

Protect your valuable electronic devices with the TPD1E04U04DPYT transient suppression device by Texas Instruments. Manufactured with top-quality materials and advanced technology, this product offers reliable protection against voltage transients, ensuring the longevity of your equipment. Ideal for applications in various industries, this single-config, surface-mount device boasts a nominal breakdown voltage of 6.2V and a maximum clamping voltage of 5.3V. Trust Texas Instruments to deliver superior quality and performance in every product, providing you with peace of mind and confidence in your electronics.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - Provides durability and protection for the components inside, making it suitable for a wide range of applications.

Config

SINGLE - Simplifies installation and maintenance, reducing the complexity of the circuit design.

Surface Mount

YES - Allows for easy and secure mounting onto the PCB, saving space and facilitating automated assembly processes.

Maximum Non Repetitive Peak Reverse Power Dissipation

19 W - Ensures reliable performance under high surge conditions, making it suitable for demanding environments.

Nominal Breakdown Voltage

6.2 V - Offers precise protection against overvoltage events, safeguarding sensitive electronic components.

Maximum Reverse Current

0.01 uA - Minimizes leakage current, enhancing the overall efficiency and reliability of the device.

Package Shape

RECTANGULAR - Facilitates easy integration into existing circuit layouts, promoting versatile application possibilities.

No. of Terminals

2 - Simplifies the connection process, making it user-friendly for both professionals and hobbyists.

Package Style (Meter)

CHIP CARRIER - Provides a compact and lightweight form factor, making it ideal for space-constrained applications.

Maximum Operating Temperature

125 °C - Allows for operation in elevated temperature conditions without compromising performance or reliability.

Minimum Operating Temperature

40 °C - Ensures functionality in cold environments, making it suitable for a wide range of operating conditions.

Terminal Finish

Nickel/Palladium/Gold (Ni/Pd/Au) - Enhances the conductivity and corrosion resistance of the terminals, ensuring long-term reliability.

Terminal Position

BOTTOM - Facilitates easy and secure connection to the PCB, enhancing the overall robustness of the device.

Minimum Breakdown Voltage

4.5 V - Provides a lower threshold for protection, ensuring early detection and mitigation of potential overvoltage events.

Peak Reflow Temperature °C

260 - Withstands high-temperature reflow processes during assembly, ensuring the integrity of the device under manufacturing conditions.

Maximum Breakdown Voltage

7.5 V - Offers a higher threshold for protection, ensuring comprehensive coverage against a wide range of overvoltage scenarios.

Reference Standard

IEC-61000-4-2, 4-4, 4-5 - Complies with international standards for electromagnetic compatibility, ensuring interoperability and reliability.

Diode Type

TRANS VOLTAGE SUPPRESSOR DIODE - Provides efficient overvoltage protection, safeguarding sensitive components from harmful voltage spikes.

Technology

AVALANCHE - Offers robust performance in handling transient events, ensuring reliable protection against voltage surges.

Terminal Form

NO LEAD - Simplifies the assembly process, reducing the risk of solder joints and improving the overall durability of the device.

Maximum Repetitive Peak Reverse Voltage

3.6 V - Ensures continuous protection against reverse voltage events, enhancing the longevity of the device.

Polarity

UNIDIRECTIONAL - Allows for efficient suppression of transient events in one direction, reducing the risk of damage to connected devices.

Maximum Clamping Voltage

5.3 V - Limits the voltage spike to a safe level, preventing damage to downstream components during transient events.

Diode Element Material

SILICON - Offers high-performance characteristics, ensuring efficient and reliable operation in suppressing voltage spikes.

Technical Specifications

Transient Suppression Devices TPD1E04U04DPYT attributes and parameters. Explore more Transient Suppression Devices devices from Texas Instruments

Specs

Additional Features:

ULTRA LOW CAPACITANCE

Maximum Breakdown Voltage:

7.5 V

Minimum Breakdown Voltage:

4.5 V

Nominal Breakdown Voltage:

6.2 V

Maximum Clamping Voltage:

5.3 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

19 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-4, 4-5

Maximum Repetitive Peak Reverse Voltage:

3.6 V

Maximum Reverse Current:

.01 uA

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TPD1E04U04DPYT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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