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TLC552CDG4

Texas Instruments

TLC552CDG4 by Texas Instruments

TLC552CDG4 by Texas Instruments is a dual-function analog waveform generator with a max output frequency of 1.2 GHz and nominal voltage of 18 V. It is used in applications requiring high-frequency signal generation, such as telecommunications and test equipment.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,677 parts In-Stock

1+ parts

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5,677

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Digiode

USA . 3,917 parts In-Stock

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3,917

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 316 parts In-Stock

1+ parts

$1.500

100+ parts

-

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316

$1.500

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Ampacity Inc.

Singapore . 541 parts In-Stock

1+ parts

$2.500

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541

$2.500

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Semicontronic

India . 851 parts In-Stock

1+ parts

$5.500

100+ parts

$5.362

1k+ parts

$5.335

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851

$5.500

$5.362

$5.335

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Parana Technologies

USA . 1,357 parts In-Stock

1+ parts

$10.992

100+ parts

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$11.453

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1,357

$10.992

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$11.453

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DigiPath Technology Company

USA . 1,424 parts In-Stock

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$12.104

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1,424

$12.104

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ChromeModa Solutions

Germany . 1,242 parts In-Stock

1+ parts

$12.351

100+ parts

$10.128

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1,242

$12.351

$10.128

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IDEA Electronic Components Group

UK . 749 parts In-Stock

1+ parts

$12.351

100+ parts

$11.733

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$11.116

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749

$12.351

$11.733

$11.116

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AZTECH Wire

Italy . 663 parts In-Stock

1+ parts

$18.538

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663

$18.538

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Corphita

USA . 3,809 parts In-Stock

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3,809

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Corohmni

South Africa . 156 parts In-Stock

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Overview

Experience unrivaled quality and precision with the TLC552CDG4 by Texas Instruments, a leading name in analog waveform generation. This versatile device offers customers a powerful solution for a wide range of applications, from signal processing to communication systems. With its high-performance capabilities, reliable construction, and user-friendly design, the TLC552CDG4 delivers exceptional value and performance that exceeds expectations. Trust Texas Instruments to provide innovative solutions that meet your needs and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY package body material provides good protection and durability for the components inside.

Maximum Output Frequency: 1.2 GHz

High maximum output frequency makes this product suitable for applications requiring high-frequency signals.

Nominal Supply Voltage (Vsup): 18 V

Nominal supply voltage of 18V allows for stable and reliable operation of the product within the specified voltage range.

Maximum Operating Temperature: 70 °C

High maximum operating temperature of 70°C ensures the product can withstand elevated temperatures without compromising performance.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and wide operating voltage range, making this product efficient and reliable.

Technical Specifications

Analog Waveform Generation TLC552CDG4 attributes and parameters. Explore more Analog Waveform Generation devices from Texas Instruments

Specs

Additional Features:

IT CAN ALSO OPERATE AT 1V OR 5V OR 15V OR 18V NOMINALS

Other IC type:

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

8.65 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Terminals:

14

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Maximum Output Frequency:

1.2 GHz

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5/18

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Analog Waveform Generation Functions

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

1 V

Nominal Supply Voltage (Vsup):

18 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.9 mm

Trade Compliance

TLC552CDG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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