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TLC372CPWRG4

Texas Instruments

TLC372CPWRG4 by Texas Instruments

TLC372CPWRG4 by Texas Instruments is a comparator with 6500uV max input offset voltage, 0.0006uA max average bias current, and 650ns nominal response time. It is used in applications requiring fast response times and low power consumption, such as sensor interfacing and signal conditioning in commercial-grade environments.

Median Price

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Lifecycle Status

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4

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1k+

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Chip Stock

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Vyrian

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Digiode

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Nova Conductors

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One Stop Electronics

USA . 415 parts In-Stock

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$1.410

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Corohmni

South Africa . 597 parts In-Stock

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Ampacity Inc.

Singapore . 1,264 parts In-Stock

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Parana Technologies

USA . 2,286 parts In-Stock

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$4.646

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DigiPath Technology Company

USA . 273 parts In-Stock

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$4.635

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ChromeModa Solutions

Germany . 4,796 parts In-Stock

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IDEA Electronic Components Group

UK . 1,926 parts In-Stock

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AZTECH Wire

Italy . 518 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

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Microchip USA

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Bastille Electronics

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Overview

Discover the top-notch quality and reliability of Texas Instruments with the TLC372CPWRG4 comparator. This versatile component offers precision performance in a wide range of applications, from industrial automation to consumer electronics. With its compact design and low power consumption, this comparator provides exceptional value and efficiency for your projects. Trust Texas Instruments for cutting-edge technology that delivers superior results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable housing for the comparator.

Maximum Input Offset Voltage: 6500 uV

Efficiently handles input offset voltages for accurate comparisons.

Maximum Average Bias Current (IIB): 0.0006 uA

Low bias current ensures minimal power consumption and accurate operation.

Surface Mount: YES

Allows for easy installation and integration onto circuit boards.

Package Shape: RECTANGULAR

Compact shape for space-saving and efficient board layout.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage for versatile applications.

Maximum Supply Voltage Limit: 18 V

Wide voltage range for flexibility in different power supply setups.

Output Type: OPEN-DRAIN

Suitable for driving external loads and providing logic level signals.

Nominal Response Time: 650 ns

Fast response time for quick decision-making in comparison operations.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Technical Specifications

Comparators TLC372CPWRG4 attributes and parameters. Explore more Comparators devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Power Supply:

5 V

Total Functions:

2

Sub-Category:

Comparators

Output Type:

Open-Drain

Performance Specifications

Maximum Input Offset Voltage:

6.5 mV

Peak Bias Current:

600 pA

Maximum Bias Current (IIB) @25 °C:

30 pA

Operational Characteristics

Maximum Supply Current:

300 μA

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

18 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Nominal Response Time:

650 ns

Physical Characteristics

Length:

0.173 in (4.4 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Type:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.25

Trade Compliance

TLC372CPWRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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