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TLC3702MJG

Texas Instruments

TLC3702MJG by Texas Instruments

TLC3702MJG by Texas Instruments is a CMOS comparator with 2 functions, 10000 uV max input offset voltage, and 0.03 uA max average bias current. Ideal for military applications due to MIL-STD-883 screening level, it operates b/w -55 to 125 °C with a response time of 2700 ns.

Median Price

$12.400

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 23 parts In-Stock

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$12.400

100+ parts

$12.150

1k+ parts

$11.900

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23

$12.400

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$11.900

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Distributors (In-Stock)

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Digiode

USA . 3,246 parts In-Stock

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$15.428

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Vyrian

USA . 3,191 parts In-Stock

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ComSIT USA

USA . 300 parts In-Stock

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ComSIT Distribution GmbH

Germany . 71 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 1,288 parts In-Stock

1+ parts

$2.896

100+ parts

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$3.390

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$2.896

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$3.390

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ChromeModa Solutions

Germany . 5,412 parts In-Stock

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$3.254

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$2.668

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$3.254

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IDEA Electronic Components Group

UK . 868 parts In-Stock

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$3.254

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$2.929

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868

$3.254

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$2.929

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AZTECH Wire

Italy . 268 parts In-Stock

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$8.920

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Corphita

USA . 3,344 parts In-Stock

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$14.616

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Microchip USA

USA . 1,943 parts In-Stock

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$46.170

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$45.510

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$45.180

10k+ parts

$44.850

1,943

$46.170

$45.510

$45.180

$44.850

A-Z Elektronik GmbH

Germany . 5,474 parts In-Stock

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DigiPath Technology Company

USA . 78 parts In-Stock

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$2.934

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Kepictronics

USA . 41 parts In-Stock

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Perfect Parts

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Overview

Explore the world of precision with the TLC3702MJG by Texas Instruments. Crafted with quality materials and cutting-edge technology, this comparator offers unparalleled performance in a compact package. Ideal for military-grade applications, this dual-function device delivers swift response times and minimal bias current, ensuring optimal efficiency and reliability. Experience the value of superior design and innovation with the TLC3702MJG, where precision meets perfection.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides high reliability and durability, making the product suitable for harsh environments.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard voltage level, ensuring compatibility with common power sources.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, allowing for reliable operation in demanding industrial applications.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity, ideal for battery-powered devices.

No. of Functions: 2

Offers dual functionality in a single package, saving space and simplifying circuit design.

Technical Specifications

Comparators TLC3702MJG attributes and parameters. Explore more Comparators devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Power Supply:

5 V

Total Functions:

2

Sub-Category:

Comparators

Output Type:

Push-Pull

Performance Specifications

Maximum Input Offset Voltage:

10 mV

Peak Bias Current:

30 nA

Maximum Bias Current (IIB) @25 °C:

30 pA

Operational Characteristics

Maximum Supply Current:

40 μA

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

18 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Nominal Response Time:

2.7 µs

Physical Characteristics

Length:

0.377 in (9.58 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin/Lead

Package Body Material:

Ceramic, Glass-Sealed

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

MIL-STD-883

Standards

JESD-30 Code:

R-GDIP-T8

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tube

Package Code:

DIP

Package Shape:

Package Type:

In-Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

TLC3702MJG Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5961-01-514-7288, 5961015147288

NIIN

015147288

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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