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TLC27M2AIDRG4

Texas Instruments

TLC27M2AIDRG4 by Texas Instruments

TLC27M2AIDRG4 by Texas Instruments is a dual operational amplifier with low-bias and micropower features. It offers a max input offset voltage of 7000 uV, nominal unity gain bandwidth of 525 kHz, and operates at an industrial temperature grade. Ideal for applications requiring precise signal amplification in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 9,970 parts In-Stock

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Vyrian

USA . 8,201 parts In-Stock

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Digiode

USA . 2,637 parts In-Stock

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Parana Technologies

USA . 934 parts In-Stock

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$3.297

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$3.821

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934

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One Stop Electronics

USA . 1,056 parts In-Stock

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$3.410

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ChromeModa Solutions

Germany . 3,613 parts In-Stock

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$3.705

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$3.038

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IDEA Electronic Components Group

UK . 2,262 parts In-Stock

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$3.705

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$3.334

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AZTECH Wire

Italy . 418 parts In-Stock

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$17.290

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Corphita

USA . 3,418 parts In-Stock

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DigiPath Technology Company

USA . 2,085 parts In-Stock

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$3.340

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Microchip USA

USA . 1,326 parts In-Stock

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Overview

Unlock the potential of your next project with the TLC27M2AIDRG4 by Texas Instruments, a top-tier manufacturer of high-quality operational amplifiers. Perfect for a wide range of applications, this dual-function op amp offers unparalleled performance and reliability. Whether you're designing precision instruments or high-fidelity audio equipment, this versatile component delivers exceptional value and benefits to customers seeking superior quality and efficiency. Elevate your designs with the TLC27M2AIDRG4 and experience the difference that Texas Instruments can make in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material makes the product suitable for a wide range of applications.

Maximum Input Offset Voltage: 7000 uV

Low input offset voltage ensures accurate output signal with minimal error.

Maximum Average Bias Current (IIB): 0.002 uA

Low bias current helps in reducing power consumption and improving stability.

Surface Mount: YES

Easy to mount on PCBs, saving space and making the assembly process efficient.

Nominal Common Mode Reject Ratio: 91 dB

High common-mode rejection ratio helps in rejecting noise and interference from the input signal.

Nominal Supply Voltage / Vsup (V): 5

Operates at a common supply voltage, making it compatible with most systems.

Frequency Compensation: YES

Stability is improved with frequency compensation, ensuring consistent performance over a wide range of frequencies.

Micropower: YES

Low power consumption makes it ideal for battery-operated devices and energy-efficient applications.

Technology: CMOS

CMOS technology offers low power consumption, high input impedance, and improved noise immunity.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed as an operational amplifier for various signal processing applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLC27M2AIDRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

5/10 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

525 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

91 dB

Minimum Common Mode Rejection Ratio (CMRR ):

65 dB

Input Offset Voltage Limit:

7000 uV

Minimum Voltage Gain:

25000

Nominal Slew Rate:

0.43 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

2 nA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

18 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

560 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLC27M2AIDRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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