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TLC27L9CDRG4

Texas Instruments

TLC27L9CDRG4 by Texas Instruments

TLC27L9CDRG4 by Texas Instruments is a CMOS Operational Amplifier with 1900uV Max Input Offset Voltage, 97dB Nominal CMRR, and 110kHz Unity Gain Bandwidth. Ideal for low-power applications in commercial temperature range, featuring small outline package and voltage-feedback architecture.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,653 parts In-Stock

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Digiode

USA . 2,940 parts In-Stock

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One Stop Electronics

USA . 1,040 parts In-Stock

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$2.410

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$2.410

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Parana Technologies

USA . 303 parts In-Stock

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$2.779

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$3.263

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303

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IDEA Electronic Components Group

UK . 1,445 parts In-Stock

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$3.122

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$2.810

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$3.122

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ChromeModa Solutions

Germany . 88 parts In-Stock

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$3.122

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$2.560

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88

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AZTECH Wire

Italy . 883 parts In-Stock

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$19.347

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883

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Microchip USA

USA . 4,741 parts In-Stock

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Corphita

USA . 2,945 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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DigiPath Technology Company

USA . 429 parts In-Stock

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$2.815

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Overview

Enhance your electronic designs with the Texas Instruments TLC27L9CDRG4 operational amplifier, known for its high-quality construction and reliable performance. Manufactured by Texas Instruments, a leader in semiconductor technology, this op amp offers exceptional precision and versatility for a wide range of applications. From signal conditioning to sensor interfacing, this compact device ensures optimal functionality and efficiency. Experience the value of superior engineering with the TLC27L9CDRG4 and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 1900 uV

Ensures minimal input voltage drift, resulting in accurate and reliable signal processing.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Nominal Common Mode Reject Ratio: 97 dB

Provides excellent rejection of common mode noise, maintaining signal integrity.

Nominal Supply Voltage / Vsup (V): 10

Operates effectively within a standard supply voltage range.

Minimum Slew Rate: 0.02 V/us

Enables fast response time for rapid signal changes.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high performance.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed for amplifying and processing signals accurately.

Nominal Unity Gain Bandwidth: 110 kHz

Indicates the frequency at which the operational amplifier can maintain unity gain, essential for various applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLC27L9CDRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

5/10 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

110 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

97 dB

Minimum Common Mode Rejection Ratio (CMRR ):

65 dB

Input Offset Voltage Limit:

1900 uV

Minimum Voltage Gain:

50000

Minimum Slew Rate:

0.02 V/us

Nominal Slew Rate:

0.04 V/us

Peak Bias Current:

600 pA

Operational Characteristics

Nominal Supply Voltage:

10 V

Maximum Supply Voltage:

18 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

132 μA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

TLC27L9CDRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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