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TLC27L7IDRG4

Texas Instruments

TLC27L7IDRG4 by Texas Instruments

TLC27L7IDRG4 by Texas Instruments is an Operational Amplifier with 2000uV Max Input Offset Voltage, 94dB Nominal CMRR, and 130kHz Unity Gain Bandwidth. Ideal for industrial applications requiring low-bias amplification in a compact package.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,419 parts In-Stock

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Digiode

USA . 964 parts In-Stock

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964

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LIBRA Elektronik GmbH

Germany . 247 parts In-Stock

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247

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Distributors (Availability)

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Parana Technologies

USA . 2,325 parts In-Stock

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$2.311

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$2.811

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2,325

$2.311

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$2.811

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DigiPath Technology Company

USA . 1,945 parts In-Stock

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$2.545

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$2.545

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ChromeModa Solutions

Germany . 2,608 parts In-Stock

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$2.597

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$2.130

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$2.597

$2.130

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IDEA Electronic Components Group

UK . 734 parts In-Stock

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$2.597

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$2.337

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734

$2.597

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$2.337

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One Stop Electronics

USA . 1,359 parts In-Stock

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$9.410

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1,359

$9.410

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AZTECH Wire

Italy . 619 parts In-Stock

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$13.912

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Corphita

USA . 2,652 parts In-Stock

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Microchip USA

USA . 1,566 parts In-Stock

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Overview

Experience unparalleled performance with the TLC27L7IDRG4 by Texas Instruments, a leading manufacturer of high-quality operational amplifiers. Ideal for a wide range of applications, this product offers exceptional value and benefits to customers seeking reliable and efficient solutions. Trust in Texas Instruments for cutting-edge technology and superior quality in every component, making your projects shine with excellence. Elevate your designs with the TLC27L7IDRG4 and experience the difference that innovation can bring.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside the package.

Maximum Input Offset Voltage: 2000 uV

Allows for precise and accurate signal amplification without significant offset errors.

Surface Mount: YES

Simplifies the circuit board assembly process and saves space.

Nominal Common Mode Reject Ratio: 94 dB

Ensures that common-mode signals are efficiently rejected, leading to cleaner output signals.

Nominal Supply Voltage / Vsup (V): 5

Operates at a common supply voltage, making it compatible with a wide range of systems.

Maximum Operating Temperature: 85 °C

Suitable for use in industrial environments where temperature fluctuations may occur.

Minimum Voltage Gain: 50000

Provides high gain for amplifying weak signals effectively.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity.

Amplifier Type: OPERATIONAL AMPLIFIER

Designed specifically for amplifying and conditioning input signals in various applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLC27L7IDRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

4/16 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

130 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

94 dB

Minimum Common Mode Rejection Ratio (CMRR ):

65 dB

Input Offset Voltage Limit:

2000 uV

Minimum Voltage Gain:

50000

Minimum Slew Rate:

0.02 V/us

Nominal Slew Rate:

0.03 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

2 nA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

18 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

54 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLC27L7IDRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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