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TLC27L2BCDRG4

Texas Instruments

TLC27L2BCDRG4 by Texas Instruments

TLC27L2BCDRG4 by Texas Instruments is a CMOS Operational Amplifier with 2 functions, offering low bias current of 0.00006 uA and micropower consumption. Ideal for applications requiring high voltage gain, it operates at temperatures from 0 to 70 °C and features a small outline package for compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,960 parts In-Stock

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5,960

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Digiode

USA . 4,186 parts In-Stock

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4,186

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 364 parts In-Stock

1+ parts

$4.410

100+ parts

-

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364

$4.410

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Parana Technologies

USA . 2,327 parts In-Stock

1+ parts

$5.984

100+ parts

-

1k+ parts

$6.760

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2,327

$5.984

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$6.760

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DigiPath Technology Company

USA . 470 parts In-Stock

1+ parts

$6.590

100+ parts

$6.062

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-

10k+ parts

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470

$6.590

$6.062

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ChromeModa Solutions

Germany . 4,557 parts In-Stock

1+ parts

$6.724

100+ parts

$5.514

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4,557

$6.724

$5.514

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IDEA Electronic Components Group

UK . 945 parts In-Stock

1+ parts

$6.724

100+ parts

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$6.052

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945

$6.724

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$6.052

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AZTECH Wire

Italy . 656 parts In-Stock

1+ parts

$16.675

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656

$16.675

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Microchip USA

USA . 3,445 parts In-Stock

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3,445

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Corphita

USA . 3,011 parts In-Stock

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3,011

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Overview

Experience unparalleled performance and reliability with the TLC27L2BCDRG4 by Texas Instruments. As a leader in the industry, Texas Instruments has developed this operational amplifier to deliver exceptional quality and precision for a wide range of applications. From industrial automation to consumer electronics, this product offers customers unparalleled value and benefits. Trust in Texas Instruments for cutting-edge technology that exceeds expectations and unlocks endless possibilities for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good strength and durability for the package, making the product reliable in various operating conditions.

Maximum Input Offset Voltage: 2000 uV

Low input offset voltage ensures high accuracy and precision in signal amplification, making the product suitable for precision applications.

Maximum Average Bias Current (IIB): 0.0006 uA

Low bias current results in minimal power consumption, making the product energy-efficient and suitable for low-power applications.

Surface Mount: YES

Surface mount packaging allows for easy installation on circuit boards, saving space and making the product suitable for compact designs.

Nominal Common Mode Reject Ratio: 94 dB

High common mode rejection ratio ensures that common mode noise is effectively rejected, leading to accurate signal processing and high-quality performance.

Technical Specifications

Operational Amplifiers (Op Amps) TLC27L2BCDRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

3/16 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

85 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

94 dB

Minimum Common Mode Rejection Ratio (CMRR ):

65 dB

Input Offset Voltage Limit:

2000 uV

Minimum Voltage Gain:

50000

Minimum Slew Rate:

0.02 V/us

Nominal Slew Rate:

0.03 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

600 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

18 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

34 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLC27L2BCDRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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