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TLC274IDG4

Texas Instruments

TLC274IDG4 by Texas Instruments

TLC274IDG4 by Texas Instruments is a CMOS Operational Amplifier with 4 functions, Vsup of 5V, and low bias current. Ideal for industrial applications, it offers a unity gain bandwidth of 1700 kHz, common mode reject ratio of 65 dB, and operates in temperatures ranging from -40 to 85°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,266 parts In-Stock

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Digiode

USA . 1,704 parts In-Stock

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ComSIT Distribution GmbH

Germany . 50 parts In-Stock

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ComSIT USA

USA . 50 parts In-Stock

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Parana Technologies

USA . 1,363 parts In-Stock

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$1.159

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$1.970

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$1.159

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DigiPath Technology Company

USA . 983 parts In-Stock

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$1.276

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$1.174

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983

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ChromeModa Solutions

Germany . 1,785 parts In-Stock

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$1.302

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$1.068

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IDEA Electronic Components Group

UK . 1,143 parts In-Stock

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$1.302

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$1.172

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AZTECH Wire

Italy . 355 parts In-Stock

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$7.849

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One Stop Electronics

USA . 1,484 parts In-Stock

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$9.410

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Component Stockers USA

USA . 705 parts In-Stock

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$99.990

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Corphita

USA . 2,870 parts In-Stock

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Infinite Electronics LLP (Excess)

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Microchip USA

USA . 214 parts In-Stock

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Overview

Elevate your projects with the TLC274IDG4 operational amplifier by Texas Instruments, a high-quality component designed to deliver exceptional performance. With Texas Instruments' reputation for excellence in manufacturing, you can trust that this op amp will meet your needs with precision and reliability. Ideal for a wide range of applications, this versatile component offers unparalleled value, providing customers with the benefits of superior functionality and efficiency. Upgrade your designs today with the TLC274IDG4 and experience the advantages it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 13000 uV

Allows for precise voltage measurements with minimal error.

Maximum Average Bias Current (IIB): 0.00006 uA

Ensures minimal power consumption and accurate signal amplification.

Surface Mount: YES

Easy to integrate into circuit boards for compact and efficient designs.

Nominal Common Mode Reject Ratio: 80 dB

Provides high immunity to common mode noise for clean signal output.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard supply voltage for compatibility with various applications.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed operation.

Nominal Unity Gain Bandwidth: 1700 kHz

Offers a high bandwidth for fast response and accurate amplification.

Architecture: VOLTAGE-FEEDBACK

Provides stable and reliable amplification with low distortion.

Technical Specifications

Operational Amplifiers (Op Amps) TLC274IDG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

4/16 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.7 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Minimum Common Mode Rejection Ratio (CMRR ):

65 dB

Input Offset Voltage Limit:

13000 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

3.6 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

60 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

18 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

6.4 mA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

TLC274IDG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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