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TLC2262IDG4

Texas Instruments

TLC2262IDG4 by Texas Instruments

TLC2262IDG4 by Texas Instruments is a dual operational amplifier with low bias current (0.0008 uA) and micropower feature. It operates at a wide temperature range (-40 to 125 °C) making it suitable for automotive applications. With a unity gain bandwidth of 730 kHz, it offers high performance in compact design (1.75 mm seated height).

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,439 parts In-Stock

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7,439

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Digiode

USA . 3,318 parts In-Stock

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3,318

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Distributors (Availability)

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One Stop Electronics

USA . 151 parts In-Stock

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$5.410

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151

$5.410

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Parana Technologies

USA . 947 parts In-Stock

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$6.458

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$7.201

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947

$6.458

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$7.201

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DigiPath Technology Company

USA . 1,702 parts In-Stock

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$7.111

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$6.542

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1,702

$7.111

$6.542

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ChromeModa Solutions

Germany . 3,874 parts In-Stock

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$7.256

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$5.950

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3,874

$7.256

$5.950

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IDEA Electronic Components Group

UK . 692 parts In-Stock

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$7.256

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$6.530

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692

$7.256

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$6.530

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AZTECH Wire

Italy . 784 parts In-Stock

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$19.806

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784

$19.806

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Corphita

USA . 3,685 parts In-Stock

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Microchip USA

USA . 1,329 parts In-Stock

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Overview

Discover the exceptional performance of the TLC2262IDG4 from Texas Instruments. As a leading manufacturer in the industry, Texas Instruments brings you high-quality operational amplifiers perfect for a wide range of applications. Experience precision and reliability with this dual-function Op Amp that offers low bias, micropower capabilities, and a wide supply voltage range. Ideal for automotive and other demanding environments, this compact amplifier delivers impressive unity gain bandwidth and common mode rejection ratio. Trust Texas Instruments to provide you with cutting-edge technology and unparalleled value in every product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used for its durability and low cost, making the product sturdy and cost-effective.

Maximum Input Offset Voltage: 3000 uV

Low input offset voltage helps in reducing errors in the output signal, making the product suitable for precision applications.

Surface Mount: YES

Surface-mount technology allows for higher component density on circuit boards, saving space and improving overall performance.

Nominal Common Mode Reject Ratio: 83 dB

High common mode rejection ratio indicates the ability of the op-amp to reject noise from the input signal, ensuring cleaner output.

Minimum Slew Rate: 0.25 V/us

A high slew rate enables the op-amp to respond quickly to changes in the input signal, making it suitable for applications requiring fast response times.

Micropower: YES

Micropower consumption ensures low power usage, making it ideal for battery-operated or low-power devices.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, this product is designed for high gain and accuracy in various signal processing applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable in noisy environments.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture provides stable performance and high linearity, making the op-amp suitable for precise voltage amplification.

Technical Specifications

Operational Amplifiers (Op Amps) TLC2262IDG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±2.2/±8/4.4/16 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

730 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

83 dB

Minimum Common Mode Rejection Ratio (CMRR ):

75 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

50000

Minimum Slew Rate:

0.25 V/us

Nominal Slew Rate:

0.55 V/us

Maximum Input Offset Current (IIO):

800 pA

Peak Bias Current:

800 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

8 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-8 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

500 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLC2262IDG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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