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TLC2252QDRQ1

Texas Instruments

TLC2252QDRQ1 by Texas Instruments

TLC2252QDRQ1 by Texas Instruments is a dual operational amplifier with low bias current (0.001 uA) and high common mode rejection ratio (88 dB). Ideal for automotive applications, it operates at temperatures ranging from -40 to 125 °C with micropower consumption. Package style: small outline, technology: CMOS, unity gain bandwidth: 210 kHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,741 parts In-Stock

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Digiode

USA . 926 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 649 parts In-Stock

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$4.955

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$5.494

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649

$4.955

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$5.494

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ChromeModa Solutions

Germany . 2,528 parts In-Stock

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$5.567

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$4.565

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IDEA Electronic Components Group

UK . 1,696 parts In-Stock

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$5.567

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$5.010

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One Stop Electronics

USA . 721 parts In-Stock

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$6.410

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721

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AZTECH Wire

Italy . 322 parts In-Stock

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$19.528

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Microchip USA

USA . 4,883 parts In-Stock

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Corphita

USA . 3,029 parts In-Stock

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DigiPath Technology Company

USA . 1,891 parts In-Stock

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$5.019

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Overview

Enhance your automotive applications with the TLC2252QDRQ1 operational amplifiers from Texas Instruments. With a focus on quality and reliability, these Op Amps offer precision performance and low bias current, making them ideal for demanding automotive environments. Designed with micropower CMOS technology, they provide high voltage gain and frequency compensation for optimal signal processing. Trust Texas Instruments to deliver innovative solutions that exceed expectations and drive success in your automotive designs. Choose the TLC2252QDRQ1 for superior performance and value in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability for the product, making it suitable for various applications.

Maximum Input Offset Voltage: 1750 uV

Low input offset voltage ensures accurate and precise amplification of signals.

Surface Mount: YES

Convenient surface mount design allows for easy installation and integration into circuit boards.

Nominal Common Mode Reject Ratio: 88 dB

High common mode rejection ratio helps in eliminating noise and interference for cleaner output signals.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage ensures compatibility with a wide range of systems and applications.

Minimum Slew Rate: 0.05 V/us

Fast slew rate enables quick response time for signal amplification and processing.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows for reliable performance in various environmental conditions.

Low-Bias: YES

Low bias current minimizes power consumption and improves efficiency of the amplifier.

Nominal Unity Gain Bandwidth: 210 kHz

High unity gain bandwidth ensures stable and accurate amplification of signals across a wide frequency range.

Technology: CMOS

CMOS technology offers low power consumption and high integration capability for enhanced performance.

Amplifier Type: OPERATIONAL AMPLIFIER

Operational amplifiers are versatile and widely used in various electronic circuits for signal amplification and processing.

Technical Specifications

Operational Amplifiers (Op Amps) TLC2252QDRQ1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±8/2.7/16 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

210 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

88 dB

Input Offset Voltage Limit:

1750 uV

Minimum Voltage Gain:

10000

Minimum Slew Rate:

0.05 V/us

Nominal Slew Rate:

0.12 V/us

Peak Bias Current:

1 nA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

8 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-8 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

150 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLC2252QDRQ1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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