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TLC2252QDG4

Texas Instruments

TLC2252QDG4 by Texas Instruments

TLC2252QDG4 by Texas Instruments is a CMOS Operational Amplifier with 2 functions, offering low-bias and micropower features. It has a max input offset voltage of 1750 uV, operates at temperatures from -40 to 125 °C, and is ideal for automotive applications due to its small outline package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,940 parts In-Stock

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5,940

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Digiode

USA . 2,193 parts In-Stock

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2,193

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,213 parts In-Stock

1+ parts

$3.031

100+ parts

-

1k+ parts

$3.543

10k+ parts

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2,213

$3.031

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$3.543

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ChromeModa Solutions

Germany . 3,662 parts In-Stock

1+ parts

$3.406

100+ parts

$2.793

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3,662

$3.406

$2.793

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IDEA Electronic Components Group

UK . 894 parts In-Stock

1+ parts

$3.406

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$3.065

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894

$3.406

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$3.065

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One Stop Electronics

USA . 635 parts In-Stock

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$3.410

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635

$3.410

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AZTECH Wire

Italy . 319 parts In-Stock

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$8.163

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319

$8.163

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Microchip USA

USA . 4,768 parts In-Stock

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Corphita

USA . 4,523 parts In-Stock

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DigiPath Technology Company

USA . 1,954 parts In-Stock

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$3.071

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1,954

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$3.071

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Overview

Experience unmatched precision and reliability with the TLC2252QDG4 by Texas Instruments, a leading manufacturer of high-quality operational amplifiers. Perfect for automotive applications, this compact dual-function op amp offers superior performance with minimal power consumption, making it ideal for a wide range of electronic devices. Trust Texas Instruments for cutting-edge technology and unleash the full potential of your designs with the TLC2252QDG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ideal for various applications

Maximum Input Offset Voltage: 1750 uV

Low input offset voltage ensures accurate and precise performance

Maximum Average Bias Current (IIB): 0.001 uA

Low bias current minimizes power consumption and improves efficiency

Surface Mount: YES

Easy to mount on PCBs, saving space and simplifying assembly process

Nominal Common Mode Reject Ratio: 88 dB

High common mode rejection ratio reduces noise and interference in signal processing

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage for compatibility with various systems

Minimum Slew Rate: 0.05 V/us

Fast slew rate enables quick response to input changes

Technology: CMOS

CMOS technology offers low power consumption and high speed operation

Nominal Unity Gain Bandwidth: 210 kHz

High unity gain bandwidth for stable performance in various circuit configurations

Packing Method: TUBE

Convenient packaging for storage and transportation

Technical Specifications

Operational Amplifiers (Op Amps) TLC2252QDG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±2.2/±8/4.4/16 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

210 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

88 dB

Input Offset Voltage Limit:

1750 uV

Minimum Voltage Gain:

10000

Minimum Slew Rate:

0.05 V/us

Nominal Slew Rate:

0.12 V/us

Peak Bias Current:

1 nA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

8 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-8 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

150 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLC2252QDG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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