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TLC2201CDRG4

Texas Instruments

TLC2201CDRG4 by Texas Instruments

TLC2201CDRG4 by Texas Instruments is an Operational Amplifier with 600uV Max Input Offset Voltage, 110dB CMRR, and 1.5V/us Min Slew Rate. Ideal for precision signal conditioning in commercial applications due to low offset and bias currents. Package style: Small Outline, Technology: CMOS, Supply Voltage: +-2.3/+-8/4.6/16V.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 8,351 parts In-Stock

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Digiode

USA . 646 parts In-Stock

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646

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Chip Stock

USA . 135 parts In-Stock

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One Stop Electronics

USA . 305 parts In-Stock

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$2.410

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Parana Technologies

USA . 1,162 parts In-Stock

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$3.980

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$4.448

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DigiPath Technology Company

USA . 2,152 parts In-Stock

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$4.383

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$4.032

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ChromeModa Solutions

Germany . 5,864 parts In-Stock

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$4.472

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$3.667

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$4.472

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IDEA Electronic Components Group

UK . 654 parts In-Stock

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$4.472

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$4.025

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AZTECH Wire

Italy . 263 parts In-Stock

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$15.090

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Microchip USA

USA . 4,932 parts In-Stock

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Corphita

USA . 3,190 parts In-Stock

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Kepictronics

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Overview

Experience unparalleled precision and reliability with the TLC2201CDRG4 operational amplifier by Texas Instruments. Crafted with cutting-edge technology and a commitment to quality, this amplifier offers a wide range of applications in various industries. Its low-offset and low-bias features ensure optimal performance, while its compact design makes it perfect for space-constrained projects. Trust Texas Instruments to deliver top-notch products that exceed expectations and provide exceptional value to customers seeking high-quality operational amplifiers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier, ensuring long-term reliability.

Maximum Input Offset Voltage: 600 uV

Ensures minimal error in the output signal due to input voltage differentials, resulting in accurate amplification.

Nominal Supply Voltage / Vsup (V): 5

Works well within a standard 5V power supply environment, making it compatible with many electronic devices.

Minimum Slew Rate: 1.5 V/us

Enables fast response to input signal changes, crucial for applications requiring rapid and precise amplification.

Nominal Unity Gain Bandwidth: 1900 kHz

Indicates the frequency at which the amplifier delivers a gain of 1, providing high bandwidth for various signal processing tasks.

Technical Specifications

Operational Amplifiers (Op Amps) TLC2201CDRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±2.3/±8/4.6/16 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

Yes

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.9 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

110 dB

Minimum Common Mode Rejection Ratio (CMRR ):

90 dB

Input Offset Voltage Limit:

600 uV

Minimum Voltage Gain:

70000

Minimum Slew Rate:

1.5 V/us

Nominal Slew Rate:

2.5 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

100 pA

Maximum Bias Current (IIB) @25 °C:

100 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

8 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-8 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

1.5 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLC2201CDRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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