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TLC1079CDG4

Texas Instruments

TLC1079CDG4 by Texas Instruments

TLC1079CDG4 by Texas Instruments is a CMOS Operational Amplifier with 14 terminals, Vsup of 5V, and low bias current of 0.00006 uA. Ideal for applications requiring micropower consumption, such as sensor interfaces and battery-powered devices due to its high common mode rejection ratio and voltage feedback architecture.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,305 parts In-Stock

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Digiode

USA . 2,848 parts In-Stock

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2,848

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Parana Technologies

USA . 2,317 parts In-Stock

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$1.643

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$2.259

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$1.643

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$2.259

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DigiPath Technology Company

USA . 458 parts In-Stock

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$1.809

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458

$1.809

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ChromeModa Solutions

Germany . 4,595 parts In-Stock

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$1.846

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$1.514

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$1.846

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IDEA Electronic Components Group

UK . 2,247 parts In-Stock

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$1.846

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$1.661

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One Stop Electronics

USA . 806 parts In-Stock

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$7.410

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806

$7.410

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AZTECH Wire

Italy . 882 parts In-Stock

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$10.114

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882

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Corphita

USA . 1,567 parts In-Stock

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Microchip USA

USA . 1,291 parts In-Stock

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Overview

Experience top-notch quality and performance with the TLC1079CDG4 operational amplifier by Texas Instruments, a trusted leader in semiconductor manufacturing. This versatile component is perfect for a wide range of applications, offering unparalleled precision and reliability. With its low-bias technology and micropower design, this op amp provides exceptional value and efficiency. Upgrade your electronics with the TLC1079CDG4 and enjoy seamless operation and enhanced functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the product lightweight and durable, suitable for various applications.

Maximum Input Offset Voltage: 1200 uV

Low input offset voltage ensures high accuracy and precision in signal processing.

Maximum Average Bias Current (IIB): 0.00006 uA

Low bias current helps in minimizing power consumption and improving overall efficiency.

Surface Mount: YES

Surface mount capability makes installation and assembly easier, saving time and effort.

Nominal Common Mode Reject Ratio: 95 dB

High common mode rejection ratio helps in reducing noise and interference, leading to clean and accurate signal output.

Nominal Supply Voltage / Vsup (V): 5

Operates at a nominal supply voltage of 5V, making it compatible with a wide range of power sources.

No. of Terminals: 14

Having multiple terminals provides flexibility in connectivity and integration with other components.

Frequency Compensation: YES

Frequency compensation feature ensures stability and prevents oscillations in the amplifier circuit.

Nominal Unity Gain Bandwidth: 85 kHz

High unity gain bandwidth allows for fast and efficient signal processing, suitable for a wide range of applications.

Technology: CMOS

CMOS technology offers low power consumption and high immunity to noise, enhancing the overall performance of the operational amplifier.

Technical Specifications

Operational Amplifiers (Op Amps) TLC1079CDG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

5/10 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

85 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

95 dB

Minimum Common Mode Rejection Ratio (CMRR ):

75 dB

Input Offset Voltage Limit:

1200 uV

Minimum Voltage Gain:

200000

Nominal Slew Rate:

32000 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

60 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

18 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

132 μA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

TLC1079CDG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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