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TL1431VTDB2

Texas Instruments

TL1431VTDB2 by Texas Instruments

TL1431VTDB2 by Texas Instruments is a 3-terminal voltage reference with adjustable output (V). It has a max voltage temp coef of 114 ppm/°C and total dose of 100k Rad(Si). This unencased chip, surface-mount device is ideal for precision voltage regulation in compact electronic applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,698 parts In-Stock

1+ parts

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6,698

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Digiode

USA . 3,293 parts In-Stock

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3,293

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,339 parts In-Stock

1+ parts

$1.500

100+ parts

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1,339

$1.500

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Parana Technologies

USA . 1,080 parts In-Stock

1+ parts

$1.620

100+ parts

-

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$2.244

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1,080

$1.620

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$2.244

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DigiPath Technology Company

USA . 390 parts In-Stock

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$1.784

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390

$1.784

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ChromeModa Solutions

Germany . 6,231 parts In-Stock

1+ parts

$1.820

100+ parts

$1.492

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6,231

$1.820

$1.492

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IDEA Electronic Components Group

UK . 1,077 parts In-Stock

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$1.820

100+ parts

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$1.638

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1,077

$1.820

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$1.638

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Semicontronic

India . 1,130 parts In-Stock

1+ parts

$4.500

100+ parts

$4.388

1k+ parts

$4.365

10k+ parts

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1,130

$4.500

$4.388

$4.365

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One Stop Electronics

USA . 1,341 parts In-Stock

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$5.500

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1,341

$5.500

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AZTECH Wire

Italy . 520 parts In-Stock

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$7.328

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520

$7.328

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Corphita

USA . 1,496 parts In-Stock

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1,496

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Corohmni

South Africa . 62 parts In-Stock

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Overview

Elevate your voltage reference needs with the TL1431VTDB2 by Texas Instruments. Known for their superior quality and reliability, Texas Instruments delivers cutting-edge technology that meets the highest industry standards. This surface mount voltage reference offers a trim or adjustable output, making it versatile for a wide range of applications. With its compact rectangular package style and upper terminal position, this product provides precision and accuracy in a small form factor. Trust Texas Instruments to provide the value and performance you need for your voltage reference requirements. Choose the TL1431VTDB2 for exceptional quality and reliability in your next project.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and secure mounting on PCBs, saving space and simplifying assembly process.

Trim or Adjustable Output (V): YES

Provides flexibility in output voltage adjustment for precise voltage reference applications.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on PCBs and facilitates standardized design layouts.

No. of Terminals: 3

Simple three-terminal design for easy integration into circuitry and connections.

Package Style (Meter): UNCASED CHIP

Uncased chip design ensures minimum space consumption and optimal thermal dissipation.

Terminal Position: UPPER

Upper terminal position for convenient connectivity and accessibility during installation.

Width (mm): 1.1176 mm

Ultra-thin width enables compact layout and precision placement in constrained spaces.

Other IC type: TWO TERMINAL VOLTAGE REFERENCE

Two-terminal voltage reference design for simplified circuitry and enhanced reliability.

Length: 1.6205 mm

Short length contributes to space-saving design while maintaining efficient performance.

Total Dose (V): 100k Rad(Si)

High radiation tolerance of 100k Rad(Si) suitable for use in demanding radiation environments.

Terminal Form: NO LEAD

Lead-free terminal form for environmentally-friendly manufacturing and compliance with RoHS regulations.

Max Voltage Temp Coef: 114 ppm/°C

Low temperature coefficient of 114 ppm/°C for stable voltage output across varying operating conditions.

Technical Specifications

Voltage References TL1431VTDB2 attributes and parameters. Explore more Voltage References devices from Texas Instruments

Specs

JESD-30 Code:

R-XUUC-N3

Length:

1.6205 mm

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

3

Package Body Material:

UNSPECIFIED

Package Code:

DIE

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Surface Mount:

YES

Max Voltage Temp Coef:

114 ppm/Cel

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Total Dose (V):

100k Rad(Si)

Trim or Adjustable Output (V):

YES

Width (mm):

1.1176 mm

Trade Compliance

TL1431VTDB2 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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