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TL1431VTDB1

Texas Instruments

TL1431VTDB1 by Texas Instruments

TL1431VTDB1 by Texas Instruments is a 3-terminal voltage reference with adjustable output (V). It has a max voltage temp coef of 114 ppm/°C and total dose of 100k Rad(Si). This unencased chip is ideal for precision voltage regulation in surface mount applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,861 parts In-Stock

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6,861

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Digiode

USA . 2,534 parts In-Stock

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2,534

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Distributors (Availability)

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Semicontronic

India . 1,279 parts In-Stock

1+ parts

$3.500

100+ parts

$3.412

1k+ parts

$3.395

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1,279

$3.500

$3.412

$3.395

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AZTECH Wire

Italy . 593 parts In-Stock

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$5.966

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593

$5.966

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One Stop Electronics

USA . 1,422 parts In-Stock

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$6.500

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$6.500

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Ampacity Inc.

Singapore . 747 parts In-Stock

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$7.500

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747

$7.500

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Parana Technologies

USA . 1,336 parts In-Stock

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$15.204

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$15.602

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1,336

$15.204

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$15.602

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DigiPath Technology Company

USA . 277 parts In-Stock

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$16.741

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277

$16.741

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ChromeModa Solutions

Germany . 5,126 parts In-Stock

1+ parts

$17.083

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$14.008

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$17.083

$14.008

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IDEA Electronic Components Group

UK . 978 parts In-Stock

1+ parts

$17.083

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$16.229

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$15.375

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978

$17.083

$16.229

$15.375

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QUARKTWIN TECHNOLOGY LTD

USA . 14,673 parts In-Stock

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Corphita

USA . 2,259 parts In-Stock

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Corohmni

South Africa . 115 parts In-Stock

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Overview

Enhance your electronic designs with the TL1431VTDB1 voltage reference by Texas Instruments. Known for their high-quality products, Texas Instruments delivers reliable solutions for a variety of applications. This surface-mount device offers trim or adjustable output options, making it versatile and adaptable for your specific needs. With its compact rectangular package style and three terminals, this voltage reference is perfect for space-constrained designs. Trust Texas Instruments to provide you with the precision and performance you need for your next project.

Feature Benefit Bullets

Surface Mount: YES

Being surface mountable makes installation and assembly easier and more efficient.

Trim or Adjustable Output (V): YES

Allows for fine-tuning of the output voltage to meet specific requirements or compensate for variations in the system.

Package Shape: RECTANGULAR

Rectangular shape is often more space-efficient and easier to handle in manufacturing processes.

No. of Terminals: 3

Having three terminals provides flexibility in connection options and allows for more functionalities.

Package Style (Meter): UNCASED CHIP

Uncased chip style offers a compact form factor and can be integrated directly onto circuit boards.

Terminal Position: UPPER

Upper terminal position may improve accessibility and ease of use in certain applications.

Width (mm): 1.1176 mm

The small width dimension enables this product to be used in space-constrained designs and applications.

Other IC type: TWO TERMINAL VOLTAGE REFERENCE

A two-terminal voltage reference can simplify the circuit design and reduce complexity.

Length: 1.6205 mm

Compact length makes this product suitable for applications where size is a critical factor.

Total Dose (V): 100k Rad(Si)

High total dose rating indicates resistance to radiation, making it suitable for use in harsh environments.

Terminal Form: NO LEAD

No lead terminal form can improve reliability and reduce the risk of solder joint failure.

Max Voltage Temp Coef: 114 ppm/°C

Low voltage temperature coefficient ensures stable output voltage over a wide temperature range.

Technical Specifications

Voltage References TL1431VTDB1 attributes and parameters. Explore more Voltage References devices from Texas Instruments

Specs

JESD-30 Code:

R-XUUC-N3

Length:

1.6205 mm

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

3

Package Body Material:

UNSPECIFIED

Package Code:

DIE

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Surface Mount:

YES

Max Voltage Temp Coef:

114 ppm/Cel

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Total Dose (V):

100k Rad(Si)

Trim or Adjustable Output (V):

YES

Width (mm):

1.1176 mm

Trade Compliance

TL1431VTDB1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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