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THS4601IDDARG3

Texas Instruments

THS4601IDDARG3 by Texas Instruments

THS4601IDDARG3 by Texas Instruments is an Operational Amplifier with 5000uV Max Input Offset Voltage, 110dB CMRR, and 180000kHz Unity Gain Bandwidth. Ideal for industrial applications requiring low bias current and high precision amplification in a compact package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,225 parts In-Stock

1+ parts

-

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9,225

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Digiode

USA . 2,455 parts In-Stock

1+ parts

-

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2,455

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 354 parts In-Stock

1+ parts

$0.410

100+ parts

-

1k+ parts

-

10k+ parts

-

354

$0.410

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Parana Technologies

USA . 1,050 parts In-Stock

1+ parts

$4.187

100+ parts

-

1k+ parts

$4.627

10k+ parts

-

1,050

$4.187

-

$4.627

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DigiPath Technology Company

USA . 169 parts In-Stock

1+ parts

$4.610

100+ parts

-

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169

$4.610

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ChromeModa Solutions

Germany . 6,309 parts In-Stock

1+ parts

$4.704

100+ parts

$3.857

1k+ parts

-

10k+ parts

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6,309

$4.704

$3.857

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IDEA Electronic Components Group

UK . 660 parts In-Stock

1+ parts

$4.704

100+ parts

-

1k+ parts

$4.234

10k+ parts

-

660

$4.704

-

$4.234

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AZTECH Wire

Italy . 798 parts In-Stock

1+ parts

$13.452

100+ parts

-

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798

$13.452

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Component Stockers USA

USA . 515 parts In-Stock

1+ parts

$99.990

100+ parts

-

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515

$99.990

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Microchip USA

USA . 4,548 parts In-Stock

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4,548

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Corphita

USA . 179 parts In-Stock

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179

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Overview

Unleash the power of precision with the THS4601IDDARG3 by Texas Instruments. Crafted with excellence and expertise, this operational amplifier is designed to deliver unparalleled performance and reliability in a wide range of applications. Whether you're looking to amplify signals or control voltage levels, this top-of-the-line component offers unmatched quality and superior functionality. Elevate your designs with the THS4601IDDARG3 and experience the difference that Texas Instruments brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable.

Maximum Input Offset Voltage: 5000 uV

Low input offset voltage ensures high precision in signal processing.

Maximum Average Bias Current (IIB): 0.0011 uA

Low bias current helps in achieving high accuracy and stability in circuit operation.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly.

Nominal Common Mode Reject Ratio: 110 dB

High common mode rejection ratio ensures minimal interference from external noise.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard supply voltage of 5V, making it compatible with most circuits.

Maximum Supply Voltage Limit: 16.5 V

Wide supply voltage range allows for flexibility in circuit design.

Maximum Operating Temperature: 85 °C

Operates efficiently in a wide temperature range, suitable for industrial environments.

Minimum Operating Temperature: -40 °C

Ability to operate at low temperatures ensures reliability in extreme conditions.

Nominal Unity Gain Bandwidth: 180000 kHz

High unity gain bandwidth enables high-speed amplification of signals.

Technical Specifications

Operational Amplifiers (Op Amps) THS4601IDDARG3 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

180 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

110 dB

Input Offset Voltage Limit:

5000 uV

Nominal Slew Rate:

100 V/us

Peak Bias Current:

1.1 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

16.5 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-16.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.067 in (1.7 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Heat Sink/Slug, Low Profile

Trade Compliance

THS4601IDDARG3 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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