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THS4303RGTTG4

Texas Instruments

THS4303RGTTG4 by Texas Instruments

THS4303RGTTG4 by Texas Instruments is an Operational Amplifier with 5250uV Max Input Offset Voltage, 15uA Max Average Bias Current, and 60dB Nominal CMRR. Ideal for industrial applications due to its wideband capability, VFB architecture, and compact square package design.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,531 parts In-Stock

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USA . 3,070 parts In-Stock

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Digiode

USA . 516 parts In-Stock

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Parana Technologies

USA . 803 parts In-Stock

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$6.405

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$7.154

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One Stop Electronics

USA . 1,262 parts In-Stock

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$6.410

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DigiPath Technology Company

USA . 739 parts In-Stock

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$7.053

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ChromeModa Solutions

Germany . 4,303 parts In-Stock

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$7.197

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$5.902

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$7.197

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IDEA Electronic Components Group

UK . 2,224 parts In-Stock

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$7.197

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$6.477

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AZTECH Wire

Italy . 473 parts In-Stock

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$17.907

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QUARKTWIN TECHNOLOGY LTD

USA . 23,827 parts In-Stock

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Corphita

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Microchip USA

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Overview

Experience superior performance and reliability with the THS4303RGTTG4 operational amplifier by Texas Instruments. Designed with cutting-edge technology and quality materials, this chip carrier op amp offers unrivaled precision and efficiency for a wide range of industrial applications. With a nominal unity gain bandwidth of 18MHz and a minimum voltage gain of 158.5, this device ensures optimal signal processing with minimal bias current. Trust in Texas Instruments to deliver innovative solutions that exceed expectations, choose the THS4303RGTTG4 for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 5250 uV

Low input offset voltage ensures accurate signal processing and high performance in various applications.

Maximum Average Bias Current (IIB): 15 uA

Low bias current helps minimize power consumption and maintain stability in the amplifier circuit.

Surface Mount: YES

Surface mount design allows for easy integration onto PCBs, saving space and simplifying assembly process.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage of 5V allows for compatibility with a wide range of electronic systems.

Maximum Input Offset Current (IIO): 18 uA

Low input offset current helps reduce errors in the amplifier output signal.

Maximum Operating Temperature: 85 °C

High operating temperature range ensures reliability and performance in harsh environmental conditions.

Minimum Voltage Gain: 158.5

High minimum voltage gain ensures signal amplification with minimal distortion.

Frequency Compensation: YES

Frequency compensation improves stability and bandwidth of the amplifier for accurate signal processing.

Nominal Unity Gain Bandwidth: 18000000 kHz

High unity gain bandwidth allows for wide frequency response and fast signal processing.

Technical Specifications

Operational Amplifiers (Op Amps) THS4303RGTTG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±1.5/±2.5/3/5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

18000 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

60 dB

Minimum Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

5250 uV

Minimum Voltage Gain:

158.5

Nominal Slew Rate:

5500 V/us

Maximum Input Offset Current (IIO):

18 uA

Peak Bias Current:

15 uA

Maximum Bias Current (IIB) @25 °C:

1 uA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

6 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

41 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.039 in (1 mm)

Total Terminals:

16

Terminal Pitch:

0.02 in (0.5 mm)

Terminal Position:

Quad

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PQCC-N16

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Chip Carrier, Heat Sink/Slug, Very Thin Profile

Package Equivalence Code:

LCC16,.12SQ,20

Trade Compliance

THS4303RGTTG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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