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THS4271DRBTG4

Texas Instruments

THS4271DRBTG4 by Texas Instruments

THS4271DRBTG4 by Texas Instruments is an Operational Amplifier with 12000uV Max Input Offset Voltage, 18uA Max Average Bias Current, and 72dB Nominal CMRR. Ideal for industrial applications requiring a wide bandwidth of 40MHz, it operates b/w -40 to 85°C with a supply voltage of ±5V.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 11,500 parts In-Stock

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Vyrian

USA . 7,398 parts In-Stock

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Digiode

USA . 4,783 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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50

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One Stop Electronics

USA . 645 parts In-Stock

1+ parts

$1.410

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645

$1.410

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Ampacity Inc.

Singapore . 306 parts In-Stock

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$2.410

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Parana Technologies

USA . 1,578 parts In-Stock

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$6.041

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$6.819

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$6.041

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ChromeModa Solutions

Germany . 5,262 parts In-Stock

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$6.788

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$5.566

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$6.788

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IDEA Electronic Components Group

UK . 2,119 parts In-Stock

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$6.788

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$6.109

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AZTECH Wire

Italy . 564 parts In-Stock

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$19.365

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Microchip USA

USA . 10,450 parts In-Stock

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Corphita

USA . 2,304 parts In-Stock

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DigiPath Technology Company

USA . 1,948 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the THS4271DRBTG4 operational amplifier by Texas Instruments. As a leader in the industry, Texas Instruments delivers cutting-edge technology for a wide range of applications. This high-quality op amp boasts a nominal bandwidth of 40 MHz and a nominal unity gain bandwidth of 400000 kHz, ensuring exceptional performance. With a compact square package design and dual terminal position, this amplifier is versatile and easy to integrate into various systems. Trust Texas Instruments to provide top-notch products that exceed your expectations and deliver unmatched value. Elevate your designs with the THS4271DRBTG4 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material helps in reducing the overall weight of the product, making it suitable for portable applications.

Maximum Input Offset Voltage: 12000 uV

With a high maximum input offset voltage, this op amp provides stable performance even in situations where accuracy is crucial.

Maximum Average Bias Current (IIB): 18 uA

The low average bias current ensures minimal power consumption, making it energy-efficient for long-term use.

Surface Mount: YES

Being surface mountable, this op amp is easy to install on circuit boards, saving space and simplifying the assembly process.

Package Shape: SQUARE

The square package shape allows for efficient space utilization, ideal for applications with limited board space.

Nominal Common Mode Reject Ratio: 72 dB

With a high common mode reject ratio, this op amp effectively eliminates unwanted noise and interference for accurate signal processing.

Nominal Supply Voltage / Vsup (V): 5

With a nominal supply voltage of 5V, this op amp can be easily integrated into a variety of systems without the need for additional power supply modifications.

No. of Terminals: 8

The presence of 8 terminals provides flexibility in connectivity options, allowing for versatile circuit design possibilities.

Maximum Input Offset Current (IIO): 8 uA

The low maximum input offset current ensures precise signal processing, making it suitable for applications requiring high accuracy.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

The combination of small outline, heat sink/slud, and very thin profile package style makes this op amp suitable for compact designs, where thermal management is essential.

Technical Specifications

Operational Amplifiers (Op Amps) THS4271DRBTG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Nominal Bandwidth (3dB):

40 MHz

Nominal Unity Gain Bandwidth:

400 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

72 dB

Minimum Common Mode Rejection Ratio (CMRR ):

67 dB

Input Offset Voltage Limit:

12000 uV

Minimum Voltage Gain:

1412.5

Nominal Slew Rate:

1000 V/us

Maximum Input Offset Current (IIO):

8 uA

Peak Bias Current:

18 uA

Maximum Bias Current (IIB) @25 °C:

15 uA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

8.25 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-8.25 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

24 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.039 in (1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Heat Sink/Slug, Very Thin Profile

Trade Compliance

THS4271DRBTG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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