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THS4131CDGNRG4

Texas Instruments

THS4131CDGNRG4 by Texas Instruments

THS4131CDGNRG4 by Texas Instruments is an Operational Amplifier with 80 MHz bandwidth, 135000 kHz unity gain bandwidth, and 95 dB common mode reject ratio. Ideal for applications requiring high-speed signal processing in commercial temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Chip Stock

USA . 3,472 parts In-Stock

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Digiode

USA . 3,074 parts In-Stock

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Vyrian

USA . 2,535 parts In-Stock

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Component Sense

UK . 208 parts In-Stock

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Nova Conductors

Japan . 58 parts In-Stock

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One Stop Electronics

USA . 1,479 parts In-Stock

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$2.410

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Parana Technologies

USA . 1,171 parts In-Stock

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$4.082

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$4.542

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Ampacity Inc.

Singapore . 470 parts In-Stock

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$4.410

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470

$4.410

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ChromeModa Solutions

Germany . 6,211 parts In-Stock

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$4.587

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$3.761

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IDEA Electronic Components Group

UK . 2,336 parts In-Stock

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$4.587

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$4.128

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AZTECH Wire

Italy . 208 parts In-Stock

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$18.001

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Microchip USA

USA . 2,753 parts In-Stock

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Aranea Global

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DigiPath Technology Company

USA . 1,352 parts In-Stock

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Corphita

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Overview

Elevate your circuit designs with the THS4131CDGNRG4 by Texas Instruments, a high-quality operational amplifier that offers exceptional performance and reliability. Manufactured by the industry leader in analog technology, this op amp is ideal for a wide range of applications, from audio equipment to precision measurement devices. With a nominal bandwidth of 80 MHz and a unity gain bandwidth of 135000 kHz, this amplifier delivers unparalleled speed and accuracy. Experience the benefits of Texas Instruments' cutting-edge technology and take your projects to the next level with the THS4131CDGNRG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material ensures durability and reliability of the product.

Maximum Input Offset Voltage: 3000 uV

Low input offset voltage ensures accurate signal processing.

Maximum Average Bias Current (IIB): 6 uA

Low bias current ensures minimal power consumption and signal distortion.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards.

Nominal Common Mode Reject Ratio: 95 dB

High common mode rejection ratio ensures effective suppression of common mode noise.

Nominal Supply Voltage / Vsup (V): 5

Suitable nominal supply voltage for optimal performance.

Power Supplies (V): +-5/+-15

Support for multiple power supply voltages offers flexibility in design.

No. of Terminals: 8

Adequate number of terminals for connectivity and functionality.

Maximum Input Offset Current (IIO): 0.5 uA

Low input offset current ensures minimal input errors.

Maximum Supply Voltage Limit: 16.5 V

High supply voltage limit for robust operation.

Maximum Operating Temperature: 70 °C

Wide operating temperature range suitable for various environments.

Frequency Compensation: YES

Frequency compensation ensures stability and performance over a wide range of frequencies.

Nominal Unity Gain Bandwidth: 135000 kHz

High nominal unity gain bandwidth for efficient signal processing.

Amplifier Type: OPERATIONAL AMPLIFIER

Operational amplifier type suitable for a wide range of applications.

Technical Specifications

Operational Amplifiers (Op Amps) THS4131CDGNRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±5/±15 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Nominal Bandwidth (3dB):

80 MHz

Nominal Unity Gain Bandwidth:

135 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

95 dB

Minimum Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

3548

Nominal Slew Rate:

52 V/us

Maximum Input Offset Current (IIO):

500 nA

Peak Bias Current:

6 uA

Maximum Bias Current (IIB) @25 °C:

6 uA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

16.5 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-16.5 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

15 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold Silver

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Heat Sink/Slug, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

THS4131CDGNRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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