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THS4121CDR

Texas Instruments

THS4121CDR by Texas Instruments

THS4121CDR by Texas Instruments is an Operational Amplifier with 9000uV Max Input Offset Voltage, 96dB CMRR, and 3.3V Supply Voltage. Ideal for applications requiring precise signal amplification in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,835 parts In-Stock

1+ parts

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7,835

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Digiode

USA . 689 parts In-Stock

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689

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 546 parts In-Stock

1+ parts

$0.410

100+ parts

-

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546

$0.410

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Parana Technologies

USA . 1,232 parts In-Stock

1+ parts

$2.532

100+ parts

-

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$3.021

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1,232

$2.532

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$3.021

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DigiPath Technology Company

USA . 526 parts In-Stock

1+ parts

$2.788

100+ parts

$2.565

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526

$2.788

$2.565

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ChromeModa Solutions

Germany . 6,989 parts In-Stock

1+ parts

$2.845

100+ parts

$2.333

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6,989

$2.845

$2.333

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IDEA Electronic Components Group

UK . 337 parts In-Stock

1+ parts

$2.845

100+ parts

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$2.560

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337

$2.845

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$2.560

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AZTECH Wire

Italy . 641 parts In-Stock

1+ parts

$11.513

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641

$11.513

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A-Z Elektronik GmbH

Germany . 2,637 parts In-Stock

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2,637

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Corphita

USA . 1,230 parts In-Stock

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Microchip USA

USA . 294 parts In-Stock

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294

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Overview

Enhance your electronic designs with the THS4121CDR operational amplifier from Texas Instruments. Manufactured with top-notch quality and precision, this device offers unmatched reliability and performance in a variety of applications. With its compact size and low power consumption, this op amp is perfect for audio systems, sensor interfaces, and signal conditioning circuits. Upgrade your projects today with the exceptional value and benefits that the THS4121CDR provides.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability for the product.

Maximum Input Offset Voltage: 9000uV

The low input offset voltage ensures accurate and precise operation of the operational amplifier.

Surface Mount: YES

Being surface mountable makes it easy to integrate this operational amplifier into various electronic circuits and PCB designs.

Nominal Common Mode Reject Ratio: 96 dB

High common mode rejection ratio helps in eliminating noise and interference from the input signal, resulting in cleaner output.

Maximum Supply Voltage Limit: 3.6V

With a maximum supply voltage limit of 3.6V, this operational amplifier can be used in a wide range of applications without the risk of overloading.

Maximum Operating Temperature: 70 °C

The wide operating temperature range of 0 to 70°C ensures the operational amplifier can perform reliably in various environmental conditions.

Technology: CMOS

The CMOS technology used in this operational amplifier provides low power consumption and high speed operation, making it energy-efficient and suitable for many applications.

Nominal Slow Rate: 55 V/us

The nominal slow rate of 55V/us indicates the operational amplifier's ability to respond to changes in input signals accurately and quickly.

Technical Specifications

Operational Amplifiers (Op Amps) THS4121CDR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Power Supply:

3.3 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Common Mode Rejection Ratio (CMRR ):

96 dB

Input Offset Voltage Limit:

9000 uV

Nominal Slew Rate:

55 V/us

Peak Bias Current:

1.2 pA

Operational Characteristics

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage:

3.6 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Maximum Supply Current:

11 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

THS4121CDR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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