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THS4120CDR

Texas Instruments

THS4120CDR by Texas Instruments

THS4120CDR by Texas Instruments is an Operational Amplifier with 9000uV Max Input Offset Voltage, 96dB CMRR, and 3.3V Supply Voltage. Ideal for applications requiring high precision amplification in a compact form factor with its small outline package and low power consumption of 11mA.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,492 parts In-Stock

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Digiode

USA . 1,525 parts In-Stock

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1,525

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Distributors (Availability)

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One Stop Electronics

USA . 710 parts In-Stock

1+ parts

$3.410

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-

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710

$3.410

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Parana Technologies

USA . 1,549 parts In-Stock

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$6.459

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-

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$7.203

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1,549

$6.459

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$7.203

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DigiPath Technology Company

USA . 684 parts In-Stock

1+ parts

$7.112

100+ parts

$6.543

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684

$7.112

$6.543

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ChromeModa Solutions

Germany . 4,444 parts In-Stock

1+ parts

$7.257

100+ parts

$5.951

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4,444

$7.257

$5.951

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IDEA Electronic Components Group

UK . 802 parts In-Stock

1+ parts

$7.257

100+ parts

-

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$6.531

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802

$7.257

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$6.531

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AZTECH Wire

Italy . 524 parts In-Stock

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$13.249

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524

$13.249

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Corphita

USA . 2,421 parts In-Stock

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Microchip USA

USA . 124 parts In-Stock

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Overview

Experience the superior quality and precision of Texas Instruments with the THS4120CDR operational amplifier. This versatile component is ideal for a wide range of applications, offering unmatched performance and reliability. From audio equipment to medical devices, this amplifier delivers exceptional value and benefits to customers seeking top-notch operational amplifiers. Trust Texas Instruments for excellence in technology and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good durability and protection for the internal components, making the product long-lasting.

Maximum Input Offset Voltage: 9000 uV

Low input offset voltage ensures high precision and accuracy in signal processing.

Maximum Average Bias Current (IIB): 0.0000012 uA

Low bias current helps in minimizing power consumption and improving overall efficiency.

Surface Mount: YES

Enables easy and convenient installation on circuit boards, saving space and simplifying manufacturing processes.

Nominal Common Mode Reject Ratio: 96 dB

High common mode rejection ratio ensures minimal interference from external noise, resulting in clean and accurate output signals.

Maximum Supply Voltage Limit: 3.6 V

Accepts a wide range of supply voltages, providing flexibility in various application scenarios.

Maximum Operating Temperature: 70 °C

Can operate efficiently in high-temperature environments, ensuring reliable performance in challenging conditions.

Technology: CMOS

Uses CMOS technology which offers low power consumption, high input resistance, and compatibility with a wide range of digital devices.

Nominal Slow Rate: 55 V/us

High slew rate allows for fast signal processing and response, making it suitable for applications requiring rapid data handling.

Technical Specifications

Operational Amplifiers (Op Amps) THS4120CDR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Power Supply:

3.3 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Common Mode Rejection Ratio (CMRR ):

96 dB

Input Offset Voltage Limit:

9000 uV

Nominal Slew Rate:

55 V/us

Peak Bias Current:

1.2 pA

Operational Characteristics

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage:

3.6 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Maximum Supply Current:

11 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

THS4120CDR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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