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THS4120CDGK

Texas Instruments

THS4120CDGK by Texas Instruments

THS4120CDGK by Texas Instruments is an Operational Amplifier with 9000uV Max Input Offset Voltage, 96dB CMRR, and 3.3V Supply Voltage. Ideal for applications requiring precise signal amplification in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,828 parts In-Stock

1+ parts

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7,828

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Digiode

USA . 3,952 parts In-Stock

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3,952

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 821 parts In-Stock

1+ parts

$2.410

100+ parts

-

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821

$2.410

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Parana Technologies

USA . 470 parts In-Stock

1+ parts

$3.762

100+ parts

-

1k+ parts

$4.257

10k+ parts

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470

$3.762

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$4.257

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DigiPath Technology Company

USA . 2 parts In-Stock

1+ parts

$4.142

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2

$4.142

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ChromeModa Solutions

Germany . 6,800 parts In-Stock

1+ parts

$4.227

100+ parts

$3.466

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6,800

$4.227

$3.466

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IDEA Electronic Components Group

UK . 422 parts In-Stock

1+ parts

$4.227

100+ parts

-

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$3.804

10k+ parts

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422

$4.227

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$3.804

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AZTECH Wire

Italy . 479 parts In-Stock

1+ parts

$17.844

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479

$17.844

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Corphita

USA . 3,120 parts In-Stock

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Microchip USA

USA . 137 parts In-Stock

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137

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Overview

Experience the unparalleled quality and reliability of Texas Instruments with the THS4120CDGK operational amplifier. Designed for precision performance, this product offers a wide range of applications in various industries. From audio equipment to medical devices, the THS4120CDGK delivers exceptional value with its low power consumption and high common mode rejection ratio. Trust in Texas Instruments for superior technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the internal components, ensuring a longer lifespan for the operational amplifier.

Maximum Input Offset Voltage: 9000 uV

The low maximum input offset voltage ensures accurate and precise signal amplification, making this operational amplifier suitable for precision applications.

Nominal Common Mode Reject Ratio: 96 dB

With a high common mode reject ratio, this operational amplifier is able to effectively eliminate common mode noise and interference, resulting in clean and reliable output signals.

Maximum Supply Voltage Limit: 3.6 V

The maximum supply voltage limit of 3.6V allows for safe operation within a specified voltage range, protecting the operational amplifier from potential damage due to overvoltage.

Temperature Grade: COMMERCIAL

The commercial temperature grade ensures reliable operation within standard temperature ranges, making this operational amplifier suitable for a wide range of commercial applications.

Technology: CMOS

The CMOS technology offers low power consumption and high input impedance, making this operational amplifier energy efficient and suitable for battery-powered devices.

Technical Specifications

Operational Amplifiers (Op Amps) THS4120CDGK attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Power Supply:

3.3 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Common Mode Rejection Ratio (CMRR ):

96 dB

Input Offset Voltage Limit:

9000 uV

Nominal Slew Rate:

55 V/us

Peak Bias Current:

1.2 pA

Operational Characteristics

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage:

3.6 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Maximum Supply Current:

16 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

THS4120CDGK Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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