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THS3112CDR

Texas Instruments

THS3112CDR by Texas Instruments

THS3112CDR by Texas Instruments is an Operational Amplifier with 103 MHz bandwidth, 67 dB CMRR, and 110000 kHz unity gain bandwidth. Ideal for applications requiring high-speed signal processing in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,659 parts In-Stock

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4,659

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Digiode

USA . 71 parts In-Stock

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71

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Distributors (Availability)

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One Stop Electronics

USA . 172 parts In-Stock

1+ parts

$2.410

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172

$2.410

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Parana Technologies

USA . 1,991 parts In-Stock

1+ parts

$6.009

100+ parts

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$6.785

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1,991

$6.009

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$6.785

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ChromeModa Solutions

Germany . 5,687 parts In-Stock

1+ parts

$6.752

100+ parts

$5.537

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5,687

$6.752

$5.537

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IDEA Electronic Components Group

UK . 855 parts In-Stock

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$6.752

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$6.077

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855

$6.752

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$6.077

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AZTECH Wire

Italy . 719 parts In-Stock

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$15.224

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719

$15.224

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Microchip USA

USA . 1,376 parts In-Stock

1+ parts

$116.780

100+ parts

$114.750

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$113.730

10k+ parts

$112.710

1,376

$116.780

$114.750

$113.730

$112.710

Corphita

USA . 3,799 parts In-Stock

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DigiPath Technology Company

USA . 257 parts In-Stock

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$6.088

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$6.088

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Overview

Enhance your electronic designs with the THS3112CDR by Texas Instruments, a top-tier manufacturer known for its high-quality operational amplifiers. Ideal for a wide range of applications in industries such as automotive, industrial, and consumer electronics, this product offers unmatched value with its precision performance and reliable functionality. Experience the benefits of using the THS3112CDR, from its superior common mode rejection ratio to its impressive unity gain bandwidth, making it a must-have component for your next project. Trust Texas Instruments to deliver excellence in every detail.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package provides a good balance of durability and cost-effectiveness for the product.

Maximum Input Offset Voltage: 10000 uV

The high maximum input offset voltage allows for more precise signal processing and accuracy in amplification.

Maximum Average Bias Current (IIB): 30 uA

The low bias current helps in reducing power consumption and maintaining stable operation of the amplifier.

Surface Mount: YES

Being surface mountable makes the product easier to integrate into circuit designs and reduces assembly time.

Nominal Common Mode Reject Ratio: 67 dB

The high common mode rejection ratio ensures that unwanted noise or interference in the common signal is minimized, leading to cleaner output.

Nominal Supply Voltage / Vsup (V): 15

With a nominal supply voltage of 15V, this amplifier is suitable for a wide range of applications while providing enough power for efficient operation.

Nominal Unity Gain Bandwidth: 110000 kHz

The high unity gain bandwidth indicates the amplifier's ability to amplify signals accurately at different frequencies without distortion.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, this product is versatile and can be used in various applications such as signal conditioning, filtering, and instrumentation.

Technical Specifications

Operational Amplifiers (Op Amps) THS3112CDR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Current Feedback

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Nominal Bandwidth (3dB):

103 MHz

Nominal Unity Gain Bandwidth:

110 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

67 dB

Minimum Common Mode Rejection Ratio (CMRR ):

63 dB

Input Offset Voltage Limit:

10000 uV

Nominal Slew Rate:

1550 V/us

Maximum Input Offset Current (IIO):

22 uA

Peak Bias Current:

30 uA

Maximum Bias Current (IIB) @25 °C:

2 uA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

16.5 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-16.5 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

13 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Trade Compliance

THS3112CDR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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