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TAS5631BDKD

Texas Instruments

TAS5631BDKD by Texas Instruments

TAS5631BDKD by Texas Instruments is a 300W audio amplifier IC with 2 channels. It operates b/w 0-70°C, suitable for commercial applications. With a package size of 15.9mm x 11mm x 3.6mm and surface mount capability, it offers high-quality audio amplification in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,415 parts In-Stock

1+ parts

-

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6,415

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Digiode

USA . 4,440 parts In-Stock

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4,440

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 378 parts In-Stock

1+ parts

$3.232

100+ parts

-

1k+ parts

$3.754

10k+ parts

-

378

$3.232

-

$3.754

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ChromeModa Solutions

Germany . 654 parts In-Stock

1+ parts

$3.631

100+ parts

$2.977

1k+ parts

-

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654

$3.631

$2.977

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IDEA Electronic Components Group

UK . 134 parts In-Stock

1+ parts

$3.631

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-

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$3.268

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134

$3.631

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$3.268

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AZTECH Wire

Italy . 351 parts In-Stock

1+ parts

$5.777

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351

$5.777

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Ampacity Inc.

Singapore . 583 parts In-Stock

1+ parts

$10.800

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583

$10.800

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One Stop Electronics

USA . 137 parts In-Stock

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$15.800

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137

$15.800

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Corphita

USA . 1,053 parts In-Stock

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1,053

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Microchip USA

USA . 399 parts In-Stock

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399

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DigiPath Technology Company

USA . 343 parts In-Stock

1+ parts

-

100+ parts

$3.274

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343

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$3.274

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Bastille Electronics

Australia . 300 parts In-Stock

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300

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Overview

Experience high-quality audio amplification with the Texas Instruments TAS5631BDKD. As a leading manufacturer in the industry, Texas Instruments delivers top-notch products that meet the highest standards. The TAS5631BDKD is perfect for a wide range of applications in the Audio & Video Amplifiers category. With a nominal output power of 300W and a low noise figure of 103dB, this audio amplifier provides superior sound quality. Get the best value for your money with the TAS5631BDKD, offering unparalleled benefits and performance to customers looking for top-of-the-line audio amplification solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability for long-term use.

Surface Mount: YES

Allows for easy installation and integration into various electronic devices.

Nominal Output Power: 300 W

Provides high power output for superior audio performance.

General IC Type: AUDIO AMPLIFIER

Specifically designed for audio amplification, ensuring optimal sound quality.

No. of Channels: 2

Supports dual-channel audio output, ideal for stereo systems.

Power Supplies (V): 12,50

Compatible with a wide range of power supplies, suitable for various applications.

Technical Specifications

Audio & Video Amplifiers TAS5631BDKD attributes and parameters. Explore more Audio & Video Amplifiers devices from Texas Instruments

Specs

General IC Type:

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e4

Length:

15.9 mm

Moisture Sensitivity Level (MSL):

4

Nominal Noise Figure:

103 dB

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

44

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Nominal Output Power:

300 W

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP44,.55

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

12,50

Qualification:

Not Qualified

Maximum Seated Height:

3.6 mm

Sub-Category:

Audio/Video Amplifiers

Maximum Supply Voltage (Vsup):

13.2 V

Minimum Supply Voltage (Vsup):

10.8 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

11 mm

Trade Compliance

TAS5631BDKD General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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