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SNJ54HC21FK

Texas Instruments

SNJ54HC21FK by Texas Instruments

SNJ54HC21FK by Texas Instruments is a CMOS logic gate with 2 functions, 4 inputs, and propagation delay of 33ns at 5V. It operates in military-grade temperatures from -55 to 125°C and has a max power supply current of 0.04mA. Ideal for applications requiring high-speed signal processing in harsh environments.

Median Price

$35.644

Lifecycle Status

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7

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1k+

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Verical

USA . 313 parts In-Stock

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$37.038

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$33.487

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Rochester

USA . 237 parts In-Stock

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$34.250

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$30.640

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$28.840

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DigiKey

USA . 237 parts In-Stock

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Digiode

USA . 1,698 parts In-Stock

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Vyrian

USA . 6,598 parts In-Stock

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Resion

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Parana Technologies

USA . 991 parts In-Stock

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$13.705

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$14.199

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DigiPath Technology Company

USA . 1,693 parts In-Stock

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$15.091

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IDEA Electronic Components Group

UK . 1,087 parts In-Stock

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$15.399

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$14.629

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$13.859

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ChromeModa Solutions

Germany . 346 parts In-Stock

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Corphita

USA . 4,248 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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Overview

Upgrade your electronic projects with the SNJ54HC21FK logic gates from Texas Instruments. Crafted with precision and expertise, this high-quality chip carrier package offers reliable performance and a fast propagation delay of 33 ns. Perfect for military-grade applications, this logic gate features a ceramic, metal-sealed cofired body material and is designed for surface mount installation. With two functions and four inputs, this versatile component provides exceptional value and efficiency for your circuit design needs. Trust Texas Instruments for superior quality and innovation in the world of logic gates.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material ensures durability and reliability, making the product suitable for harsh conditions and high temperatures.

Propagation Delay At Nominal Supply: 33 ns

Low propagation delay ensures efficient and quick signal processing.

Surface Mount: YES

Surface mount capability allows for easy and space-saving installation on circuit boards.

No. of Inputs: 4

Having multiple inputs allows for complex logic operations to be performed effectively.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes it compatible with a wide range of applications.

Maximum Operating Temperature: 125 °C

The ability to operate at high temperatures ensures reliability in various environments.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, enhancing the overall performance of the product.

Technical Specifications

Logic Gates SNJ54HC21FK attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

HC/UH

JESD-30 Code:

S-CQCC-N20

JESD-609 Code:

e0

Length:

8.89 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

5.2 Amp

No. of Functions:

2

No. of Inputs:

4

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

LCC20,.35SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

33 ns

Propagation Delay (tpd):

165 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

2.03 mm

Sub-Category:

Gate

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

8.89 mm

Trade Compliance

SNJ54HC21FK Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-274-4209, 5962012744209

NIIN

012744209

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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