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SNJ54HC132FK

Texas Instruments

SNJ54HC132FK by Texas Instruments

SNJ54HC132FK by Texas Instruments is a CMOS logic gate with 4 functions, 2 inputs, and Schmitt Trigger technology. It has a propagation delay of 37 ns at 5V supply voltage, making it ideal for military applications requiring fast response times. With a max operating temperature of 125°C and MIL-PRF-38535 screening level, this chip carrier package is suitable for harsh environments.

Median Price

$27.920

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 19 parts In-Stock

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$27.920

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$27.360

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$26.800

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DigiKey

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Bristol Electronics

USA . 5 parts In-Stock

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$22.800

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Digiode

USA . 3,808 parts In-Stock

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$37.060

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Vyrian

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Corel Iberica Componentes, S.L.

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ECAB

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Mil-Aero Solutions, Inc.

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Inland Empire Components Inc.

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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Parana Technologies

USA . 2,285 parts In-Stock

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$18.365

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$18.495

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ChromeModa Solutions

Germany . 4,148 parts In-Stock

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$20.635

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$16.921

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IDEA Electronic Components Group

UK . 1,614 parts In-Stock

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Corphita

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Microchip USA

USA . 1,191 parts In-Stock

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$79.410

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$78.700

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$78.700

DigiPath Technology Company

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Overview

Enhance your electronic projects with the SNJ54HC132FK logic gates from Texas Instruments, a trusted manufacturer known for producing high-quality components. These logic gates are versatile and efficient, offering customers reliable performance in a variety of applications. With a military screening level and Schmitt trigger technology, these logic gates provide precision and accuracy that you can trust. Upgrade your circuits with the SNJ54HC132FK and experience the value and benefits of superior quality components from Texas Instruments.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides durability and reliability, ensuring the product will last a long time.

Propagation Delay At Nominal Supply: 37 ns

Fast propagation delay ensures quick response time in processing signals.

Surface Mount: YES

Ease of installation and space-saving design make it convenient for use in compact electronic devices.

No. of Functions: 4

Ability to perform multiple functions in one device increases versatility and efficiency.

Screening Level: MIL-PRF-38535

Compliance with military standards ensures high quality and reliability in extreme conditions.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard voltage, making it compatible with a wide range of electronic systems.

No. of Inputs: 2

Efficiently processes input signals with minimal delay, enhancing overall performance.

Package Shape: SQUARE

Square shape allows for easy integration into circuit boards, maximizing space utilization.

Load Capacitance (CL): 50 pF

Designed to work efficiently with standard load capacitance, ensuring optimal performance.

Power Supplies (V): 2/6

Ability to work with different power supplies offers flexibility in application and compatibility.

No. of Terminals: 20

Sufficient terminals for connecting with other components and circuits, enabling complex operations.

Package Style (Meter): CHIP CARRIER

Chip carrier design enhances heat dissipation and protects the internal components.

Maximum I (ol): 5.2 Amp

High output current capability allows for driving various loads, expanding usage options.

Propagation Delay (tpd): 186 ns

Relatively low propagation delay ensures responsive and accurate signal processing.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, suitable for use in demanding environments.

Minimum Operating Temperature: -55 °C

Operates in extreme cold conditions, making it versatile for different applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Provides good conductivity and corrosion resistance, extending the product's lifespan.

Terminal Position: QUAD

Quad terminal position allows for easy and secure connections during installation.

Maximum Seated Height: 2.03 mm

Low profile design saves space and facilitates compact device assembly.

Width: 8.89 mm

Compact width enables easy integration into various electronic systems and devices.

Minimum Supply Voltage (Vsup): 2 V

Works efficiently even at low voltages, enhancing energy efficiency and performance.

Length: 8.89 mm

Compact length facilitates easy placement and installation in electronic circuits.

Temperature Grade: MILITARY

Military-grade components ensure reliability and performance in harsh operating conditions.

Schmitt Trigger: YES

Schmitt trigger feature helps in cleaning up noisy signals and improving signal integrity.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and fast switching speed.

Terminal Form: NO LEAD

Lead-free terminal form is environmentally friendly and complies with regulations.

Packing Method: TUBE

Secure packing method ensures safe transportation and storage of the product.

Terminal Pitch: 1.27 mm

Optimal terminal pitch allows for easy soldering and connections, facilitating installation.

Maximum Supply Voltage (Vsup): 6 V

Can handle high supply voltages, offering flexibility in power source compatibility.

Maximum Power Supply Current (ICC): 0.04 mA

Low power supply current consumption contributes to energy efficiency and extended battery life.

Technical Specifications

Logic Gates SNJ54HC132FK attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

HC/UH

JESD-30 Code:

S-CQCC-N20

JESD-609 Code:

e0

Length:

8.89 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

5.2 Amp

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

LCC20,.35SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

37 ns

Propagation Delay (tpd):

186 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

2.03 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

8.89 mm

Trade Compliance

SNJ54HC132FK Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-414-8164, 5962014148164

NIIN

014148164

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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