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SNJ54ALS04BJ

Texas Instruments

SNJ54ALS04BJ by Texas Instruments

SNJ54ALS04BJ by Texas Instruments is a TTL logic gate with 6 functions, 17 ns propagation delay at 5V. It operates in military-grade temperatures from -55 to 125 °C and has a max power supply current of 4.4 mA. Ideal for applications requiring high-speed signal processing in harsh environments.

Median Price

$11.622

Lifecycle Status

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Arrow

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Rochester

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$11.300

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$9.510

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Freelance Electronics

USA . 200 parts In-Stock

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American Microsemiconductor Inc.

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Component Electronics Inc.

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TEDSS.com

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Digiode

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Vyrian

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TME

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Holdelec - ElecDif-Pro

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Parana Technologies

USA . 700 parts In-Stock

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$691.450

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$6.701

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DigiPath Technology Company

USA . 394 parts In-Stock

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$8.199

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$7.543

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ChromeModa Solutions

Germany . 5,354 parts In-Stock

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IDEA Electronic Components Group

UK . 679 parts In-Stock

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Corphita

USA . 458 parts In-Stock

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AZTECH Wire

Italy . 1,189 parts In-Stock

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Microchip USA

USA . 2,737 parts In-Stock

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$30.080

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Assy Fe

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Overview

Experience the superior quality and reliability of Texas Instruments with the SNJ54ALS04BJ logic gates. Perfect for various applications, these logic gates offer fast propagation delays and 3-state output characteristics. With a military-grade screening level and a wide operating temperature range, this product provides unmatched value and performance. Trust Texas Instruments to deliver top-notch products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 17 ns

Low propagation delay ensures fast signal processing, making this logic gate suitable for high-speed applications.

No. of Functions: 6

Having multiple functions in one component increases efficiency and saves space in circuit designs.

Nominal Supply Voltage / Vsup (V): 5

Operating at a common supply voltage of 5V allows for compatibility with standard TTL circuitry.

Output Characteristics: 3-STATE

The 3-STATE output capability provides added flexibility in controlling the output signal, enhancing the versatility of this logic gate.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this logic gate can withstand harsh environmental conditions and operate reliably in industrial settings.

Technical Specifications

Logic Gates SNJ54ALS04BJ attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

ALS

JESD-30 Code:

R-GDIP-T14

JESD-609 Code:

e0

Length:

19.56 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

4.4 mA

Propagation Delay At Nominal Supply:

17 ns

Propagation Delay (tpd):

17 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

5.08 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

SNJ54ALS04BJ Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-309-1051, 5962013091051, 5962-01-335-5272, 5962013355272

NIIN

013091051, 013355272

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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